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Results: 1-6 |
Results: 6

Authors: Dalpian, GM Fazzio, A da Silva, AJR
Citation: Gm. Dalpian et al., Influence of surface degrees of freedom on the adsorption of Ge ad-atoms on Si(100), COMP MAT SC, 22(1-2), 2001, pp. 19-23

Authors: Venezuela, P Dalpian, GM da Silva, AJR Fazzio, A
Citation: P. Venezuela et al., Ab initio determination of the atomistic structure of SixGe1-x alloy - art. no. 193202, PHYS REV B, 6419(19), 2001, pp. 3202

Authors: Dalpian, GM Fazzio, A da Silva, AJR
Citation: Gm. Dalpian et al., Adsorption of monomers on semiconductors and the importance of surface degrees of freedom - art. no. 205303, PHYS REV B, 6320(20), 2001, pp. 5303

Authors: Dalpian, GM Fazzio, A da Silva, AJR
Citation: Gm. Dalpian et al., Theoretical STM images of Ge monomers and trimers on Si(100), SURF SCI, 482, 2001, pp. 507-511

Authors: da Silva, AJR Dalpian, GM Janotti, A Fazzio, A
Citation: Ajr. Da Silva et al., Two-atom structures of Ge on Si(100): Dimers versus adatom pairs - art. no. 036104, PHYS REV L, 8703(3), 2001, pp. 6104-NIL_101

Authors: Dalpian, GM Janotti, A Fazzio, A da Silva, AJR
Citation: Gm. Dalpian et al., Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers, PHYSICA B, 274, 1999, pp. 589-592
Risultati: 1-6 |