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Results:
1-11
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Results: 11
Authors:
Grenzer, J
Darowski, N
Geue, T
Pietsch, U
Daniel, A
Rennon, S
Reithmaier, JP
Forchel, A
Citation: J. Grenzer et al., Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation, J PHYS D, 34(10A), 2001, pp. A11-A14
Authors:
Ulyanenkov, A
Inaba, K
Mikulik, P
Darowski, N
Omote, K
Pietsch, U
Grenzer, J
Forchel, A
Citation: A. Ulyanenkov et al., X-ray diffraction and reflectivity analysis of GaAs/InGaAs free-standing trapezoidal quantum wires, J PHYS D, 34(10A), 2001, pp. A179-A182
Authors:
Pietsch, U
Darowski, N
Ulyanenkov, A
Grenzer, J
Wang, KH
Forchel, A
Citation: U. Pietsch et al., Analysis of the strain distribution in lateral nanostructures for interpreting photoluminescence data, PHYSICA B, 283(1-3), 2000, pp. 92-96
Authors:
Zhuang, Y
Pietsch, U
Stangl, J
Holy, V
Darowski, N
Grenzer, J
Zerlauth, S
Schaffler, F
Bauer, G
Citation: Y. Zhuang et al., In-plane strain and shape analysis of Si/SiGe nanostructures by grazing incidence diffraction, PHYSICA B, 283(1-3), 2000, pp. 130-134
Authors:
Grenzer, J
Darowski, N
Pietsch, U
Daniel, A
Rennon, S
Reithmaier, JP
Forchel, A
Citation: J. Grenzer et al., Grazing-incidence diffraction strain analysis of a laterally-modulated multiquantum well system produced by focused-ion-beam implantation, APPL PHYS L, 77(26), 2000, pp. 4277-4279
Authors:
Zhuang, Y
Stangl, J
Darhuber, AA
Bauer, G
Mikulik, P
Holy, V
Darowski, N
Pietsch, U
Citation: Y. Zhuang et al., X-ray diffraction from quantum wires and quantum dots, J MAT S-M E, 10(3), 1999, pp. 215-221
Authors:
Ulyanenkov, A
Darowski, N
Grenzer, J
Pietsch, U
Wang, KH
Forchel, A
Citation: A. Ulyanenkov et al., Evaluation of strain distribution in freestanding and buried lateral nanostructures, PHYS REV B, 60(24), 1999, pp. 16701-16714
Authors:
Zhuang, Y
Holy, V
Stangl, J
Darhuber, AA
Mikulik, P
Zerlauth, S
Schaffler, F
Bauer, G
Darowski, N
Lubbert, D
Pietsch, U
Citation: Y. Zhuang et al., Strain relaxation in periodic arrays of Si SiGe quantum wires determined by coplanar high-resolution x-ray diffraction and grazing incidence diffraction, J PHYS D, 32(10A), 1999, pp. A224-A229
Authors:
Holy, V
Stangl, J
Zerlauth, S
Bauer, G
Darowski, N
Lubbert, D
Pietsch, U
Citation: V. Holy et al., Lateral arrangement of self-assembled quantum dots in an SiGe Si superlattice, J PHYS D, 32(10A), 1999, pp. A234-A238
Authors:
Ulyanenkov, A
Baumbach, T
Darowski, N
Pietsch, U
Wang, KH
Forchel, A
Wiebach, T
Citation: A. Ulyanenkov et al., In-plane strain distribution in free-standing GaAs/InGaAs/GaAs single quantum well surface nanostructures on GaAs[001], J APPL PHYS, 85(3), 1999, pp. 1524-1530
Authors:
Darowski, N
Pietsch, U
Wang, KH
Forchel, A
Shen, Q
Kycia, S
Citation: N. Darowski et al., X-ray diffraction analysis of strain relaxation in free standing and buried GaAs/GaInAs/GaAs SQW lateral structures, THIN SOL FI, 336(1-2), 1998, pp. 271-276
Risultati:
1-11
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