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Authors: Berntgen, J Behres, A Kluth, J Heime, K Daumann, W Auer, U Tegude, FJ
Citation: J. Berntgen et al., Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates, MICROEL REL, 40(11), 2000, pp. 1911-1914

Authors: Berntgen, J Heime, K Daumann, W Auer, U Tegude, FJ Matulionis, A
Citation: J. Berntgen et al., The 1/f noise of InP based 2DEG devices and its dependence on mobility, IEEE DEVICE, 46(1), 1999, pp. 194-203
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