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Results:
1-7
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Results: 7
Authors:
Auvray, L
Dumont, H
Dazord, J
Monteil, Y
Bouix, J
Bru-Chevallier, C
Grenouillet, L
Citation: L. Auvray et al., Growth of GaAsN: surface study by AFM and optical properties, MAT SC S PR, 3(5-6), 2000, pp. 505-509
Authors:
Auvray, L
Dumont, H
Dazord, J
Monteil, Y
Bouix, J
Bru-Chevalier, C
Citation: L. Auvray et al., AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE, J CRYST GR, 221, 2000, pp. 475-480
Authors:
Dumont, H
Auvray, L
Dazord, J
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine, APPL SURF S, 150(1-4), 1999, pp. 161-170
Authors:
Borgi, K
Hassen, F
Maaref, H
Dazord, J
Monteil, Y
Davenas, J
Citation: K. Borgi et al., Initial stages of InP/GaP (100) and (111)(A,B) grown by metal organic chemical vapor deposition, MICROELEC J, 30(4-5), 1999, pp. 347-351
Authors:
Dumont, H
Auvray, L
Dazord, J
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Surface morphology, electrical and optical properties of In0.53Ga0.47As/InP grown by metalorganic vapor-phase epitaxy using trimethylarsine and arsine, J CRYST GR, 204(1-2), 1999, pp. 1-9
Authors:
Dumont, H
Auvray, L
Dazord, J
Souliere, V
Monteil, Y
Bouix, J
Ougazzaden, A
Citation: H. Dumont et al., Surface morphology of InGaAs and InP materials grown with trimethylarsenicand arsine on vicinal InP substrates, J CRYST GR, 197(4), 1999, pp. 755-761
Authors:
Dumont, H
Auvray, L
Dazord, J
Souliere, V
Monteil, Y
Bouix, J
Citation: H. Dumont et al., Strain-induced surface morphology of slightly mismatched InxGa1-xAs films grown on vicinal (100) InP substrates, J APPL PHYS, 85(10), 1999, pp. 7185-7190
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