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Results: 1-16 |
Results: 16
Diffusion enhanced carbon loss from SiGeC layers due to oxidation - art. no. 073308
Authors: Carroll, MS Sturm, JC Napolitani, E De Salvador, D Berti, M Stangl, J Bauer, G Tweet, DJ
Citation: Ms. Carroll et al., Diffusion enhanced carbon loss from SiGeC layers due to oxidation - art. no. 073308, PHYS REV B, 6407(7), 2001, pp. 3308
Lattice distortion in InxGa1-xAs/InP epitaxial films: A second- and third-shell XAFS study - art. no. 115326
Authors: Tormen, M De Salvador, D Drigo, AV Romanato, F Boscherini, F Mobilio, S
Citation: M. Tormen et al., Lattice distortion in InxGa1-xAs/InP epitaxial films: A second- and third-shell XAFS study - art. no. 115326, PHYS REV B, 6311(11), 2001, pp. 5326
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure - art. no. 045314
Authors: De Salvador, D Tormen, M Berti, M Drigo, AV Romanato, F Boscherini, F Stangl, J Zerlauth, S Bauer, G Colombo, L Mobilio, S
Citation: D. De Salvador et al., Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure - art. no. 045314, PHYS REV B, 6304(4), 2001, pp. 5314
Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy
Authors: Re, M Scalese, S Mirabella, S Terrasi, A Priolo, F Rimini, E Berti, M Coati, A Drigo, A Carnera, A De Salvador, D Spinella, C La Mantia, A
Citation: M. Re et al., Structural characterisation and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 749-755
Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system
Authors: Bocchi, C Franchi, S Germini, F Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV
Citation: C. Bocchi et al., Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system, J APPL PHYS, 89(8), 2001, pp. 4676-4678
Crack formation in tensile InGaAs/InP layers
Authors: Natali, M De Salvador, D Berti, M Drigo, AV Lazzarini, L Salviati, G Rossetto, G Torzo, G
Citation: M. Natali et al., Crack formation in tensile InGaAs/InP layers, J VAC SCI B, 18(5), 2000, pp. 2527-2533
Metastability of Si1-yCy epilayers under 2 MeV alpha-particle irradiation
Authors: Berti, M De Salvador, D Drigo, AV Petrovich, M Stangl, J Schaffler, F Zerlauth, S Bauer, G Armigliato, A
Citation: M. Berti et al., Metastability of Si1-yCy epilayers under 2 MeV alpha-particle irradiation, MICRON, 31(3), 2000, pp. 285-289
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers
Authors: Natali, M Romanato, F Napolitani, E De Salvador, D Drigo, AV
Citation: M. Natali et al., Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers, PHYS REV B, 62(16), 2000, pp. 11054-11062
Lattice parameter of Si1-x-yGexCy alloys
Authors: De Salvador, D Petrovich, M Berti, M Romanato, F Napolitani, E Drigo, A Stangl, J Zerlauth, S Muhlberger, M Schaffler, F Bauer, G Kelires, PC
Citation: D. De Salvador et al., Lattice parameter of Si1-x-yGexCy alloys, PHYS REV B, 61(19), 2000, pp. 13005-13013
Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor
Authors: Schiavuta, P Cepek, C Sancrotti, M Pedio, M Berti, M De Salvador, D Drigo, AV
Citation: P. Schiavuta et al., Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor, SURF SCI, 454, 2000, pp. 827-831
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide
Authors: DeVittorio, M Coli, G Rinaldi, R Gigli, G Cingolani, R De Salvador, D Berti, M Drigo, A Fucilli, F Ligonzo, T Augelli, V Rizzi, A Lantier, R Freundt, D Luth, H Neubauer, B Gerthsen, D
Citation: M. Devittorio et al., Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide, SOL ST ELEC, 44(3), 2000, pp. 465-470
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system
Authors: Germini, F Bocchi, C Ferrari, C Franchi, S Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV
Citation: F. Germini et al., Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial system, J PHYS D, 32(10A), 1999, pp. A12-A15
Composition control of GaSbAs alloys
Authors: Bosacchi, A Franchi, S Allegri, P Avanzini, V Baraldi, A Magnanini, R Berti, M De Salvador, D Sinha, SK
Citation: A. Bosacchi et al., Composition control of GaSbAs alloys, J CRYST GR, 202, 1999, pp. 858-860
Bond length variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness
Authors: Tormen, M De Salvador, D Natali, M Drigo, A Romanato, F Rossetto, G Boscherini, F Mobilio, S
Citation: M. Tormen et al., Bond length variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness, J APPL PHYS, 86(5), 1999, pp. 2533-2539
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system
Authors: Bocchi, C Franchi, S Germini, F Baraldi, A Magnanini, R De Salvador, D Berti, M Drigo, AV
Citation: C. Bocchi et al., Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system, J APPL PHYS, 86(3), 1999, pp. 1298-1305
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57,pg 14 619, 1998)
Authors: Romanato, F De Salvador, D Berti, M Drigo, A Natali, M Tormen, M Rossetto, G Pascarelli, S Boscherini, F Lamberti, C Mobilio, S
Citation: F. Romanato et al., Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57,pg 14 619, 1998), PHYS REV B, 58(19), 1998, pp. 13277-13277
Risultati: 1-16 |