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Results:
1-15
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Results: 15
Authors:
De Wolf, I
Jian, C
van Spengen, WM
Citation: I. De Wolf et al., The investigation of microsystems using Raman spectroscopy, OPT LASER E, 36(2), 2001, pp. 213-223
Authors:
De Wolf, I
Rasras, M
Citation: I. De Wolf et M. Rasras, Spectroscopic photon emission microscopy: a unique tool for failure analysis of microelectronics devices, MICROEL REL, 41(8), 2001, pp. 1161-1169
Authors:
Dombrowski, KF
Dietrich, B
De Wolf, I
Rooyackers, R
Badenes, G
Citation: Kf. Dombrowski et al., Investigation of stress in shallow trench isolation using UV micro-Raman spectroscopy, MICROEL REL, 41(4), 2001, pp. 511-515
Authors:
Rasras, MS
De Wolf, I
Groeseneken, G
Maes, HE
Citation: Ms. Rasras et al., Spectroscopic identification of light emitted from defects in silicon devices, J APPL PHYS, 89(1), 2001, pp. 249-258
Authors:
Rasras, M
De Wolf, I
Groeseneken, G
Kaczer, B
Degraeve, R
Maes, HE
Citation: M. Rasras et al., Photo-carrier generation as the origin of Fowler-Nordheim-induced substrate hole current in thin oxides, IEEE DEVICE, 48(2), 2001, pp. 231-238
Authors:
Stuer, C
Van Landuyt, J
Bender, H
De Wolf, I
Rooyackers, R
Badenes, G
Citation: C. Stuer et al., Investigation by convergent beam electron diffraction of the stress aroundshallow trench isolation structures, J ELCHEM SO, 148(11), 2001, pp. G597-G601
Authors:
Chen, J
Chan, M
De Wolf, I
Citation: J. Chen et al., Local stress measurements in packaging by Raman spectroscopy, PROCEEDINGS OF 3RD ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, 2000, pp. 159-162
Authors:
Donaton, RA
Jin, S
Bender, H
Conard, T
De Wolf, I
Maex, K
Vantomme, A
Langouche, G
Citation: Ra. Donaton et al., New technique for forming continuous, smooth, and uniform ultrathin (3 nm)PtSi layers, EL SOLID ST, 2(4), 1999, pp. 195-197
Authors:
De Wolf, I
Citation: I. De Wolf, Stress measurements in Si microelectronics devices using Raman spectroscopy, J RAMAN SP, 30(10), 1999, pp. 877
Authors:
Russ, C
Bock, K
Rasras, M
De Wolf, I
Groeseneken, G
Maes, HE
Citation: C. Russ et al., Non-uniform triggering of gg-nMOSt investigated by combined emission microscopy and transmission line pulsing, MICROEL REL, 39(11), 1999, pp. 1551-1561
Authors:
Steegen, A
De Wolf, I
Maex, K
Citation: A. Steegen et al., Characterization of the local mechanical stress induced during the Ti and Co/Ti salicidation in sub-0.25 mu m technologies, J APPL PHYS, 86(8), 1999, pp. 4290-4297
Authors:
De Wolf, I
Ignat, M
Pozza, G
Maniguet, L
Maes, HE
Citation: I. De Wolf et al., Analysis of local mechanical stresses in and near tungsten lines on silicon substrate, J APPL PHYS, 85(9), 1999, pp. 6477-6485
Authors:
De Wolf, I
Anastassakis, E
Citation: I. De Wolf et E. Anastassakis, Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment (vol 79, pg 7148, 1996), J APPL PHYS, 85(10), 1999, pp. 7484-7485
Authors:
Smeys, P
Griffin, PB
Rek, ZU
De Wolf, I
Saraswat, KC
Citation: P. Smeys et al., Influence of process-induced stress on device characteristics and its impact on scaled device performance, IEEE DEVICE, 46(6), 1999, pp. 1245-1252
Authors:
Dombrowski, KF
De Wolf, I
Dietrich, B
Citation: Kf. Dombrowski et al., Stress measurements using ultraviolet micro-Raman spectroscopy, APPL PHYS L, 75(16), 1999, pp. 2450-2451
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