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Results: 1-25 | 26-31 |
Results: 26-31/31
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Bougrioua, Z Farvacque, JL Moerman, I Demeester, P Harris, JJ Lee, K van Tendeloo, G Lebedev, O Thrush, EJ
Citation: Z. Bougrioua et al., Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE, PHYS ST S-B, 216(1), 1999, pp. 571-576
Survivable communication networks
Authors: Demeester, P Wu, TH Yoshikai, N
Citation: P. Demeester et al., Survivable communication networks, IEEE COMM M, 37(8), 1999, pp. 40
Resilience in multilayer networks
Authors: Demeester, P Gryseels, M Autenrieth, A Brianza, C Castagna, L Signorelli, G Clemente, R Ravera, M Jajszczyk, A Janukowicz, D Van Doorselaere, K Harada, Y
Citation: P. Demeester et al., Resilience in multilayer networks, IEEE COMM M, 37(8), 1999, pp. 70-76
Growth and in situ monitoring of GaN using IR interference effects
Authors: Considine, L Thrush, EJ Crawley, JA Jacobs, K Van der Stricht, W Moerman, I Demeester, P Park, GH Hwang, SJ Song, JJ
Citation: L. Considine et al., Growth and in situ monitoring of GaN using IR interference effects, J CRYST GR, 195(1-4), 1998, pp. 192-198
Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor
Authors: Vanhollebeke, K Considine, L Moerman, I Demeester, P Thrush, EJ Crawley, JA
Citation: K. Vanhollebeke et al., Highly uniform AlAs/GaAs, InGa(Al)P/GaAs and InGaAs(P)/InP structures grown in a three 2" wafer close-spaced vertical rotating disk reactor, J CRYST GR, 195(1-4), 1998, pp. 644-647
High quality InGaAs/AlGaAs lasers grown on Ge substrates
Authors: D'Hondt, M Yu, ZQ Depreter, B Sys, C Moerman, I Demeester, P Mijlemans, P
Citation: M. D'Hondt et al., High quality InGaAs/AlGaAs lasers grown on Ge substrates, J CRYST GR, 195(1-4), 1998, pp. 655-659
Risultati: 1-25 | 26-31 |