Authors: Heying, B Smorchkova, I Poblenz, C Elsass, C Fini, P Den Baars, S Mishra, U Speck, JS

Citation: B. Heying et al., Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 77(18), 2000, pp. 2885-2887