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Results:
1-7
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Results: 7
Authors:
Chang, KM
Tseng, MH
Deng, IC
Tsai, YP
Yeh, SJ
Citation: Km. Chang et al., Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization, JPN J A P 1, 40(11), 2001, pp. 6663-6667
Authors:
Chang, KM
Deng, IC
Tsai, YP
Wen, CY
Yeh, SJ
Wang, SW
Wang, JY
Citation: Km. Chang et al., A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance, J ELCHEM SO, 147(6), 2000, pp. 2332-2336
Authors:
Chang, KM
Deng, IC
Yeh, SJ
Tsai, YP
Citation: Km. Chang et al., Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application, J ELCHEM SO, 147(5), 2000, pp. 1957-1961
Authors:
Chang, KM
Deng, IC
Yeh, TH
Lain, KD
Fu, CM
Citation: Km. Chang et al., Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system, JPN J A P 1, 38(3A), 1999, pp. 1343-1351
Authors:
Chang, KM
Deng, IC
Yeh, SJ
Tsai, YP
Citation: Km. Chang et al., Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment, EL SOLID ST, 2(12), 1999, pp. 634-636
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
Authors:
Chang, KM
Deng, IC
Lin, HY
Citation: Km. Chang et al., Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film, J ELCHEM SO, 146(8), 1999, pp. 3092-3096
Authors:
Chang, KM
Deng, IC
Yeh, TH
Shih, CW
Citation: Km. Chang et al., Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment, J ELCHEM SO, 146(7), 1999, pp. 2533-2539
Risultati:
1-7
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