AAAAAA

   
Results: 1-19 |
Results: 19
Redistribution of Ni implanted into InP
Authors: Chini, TK Ghose, SK Rout, B Dev, BN Tanemura, M Okuyama, F
Citation: Tk. Chini et al., Redistribution of Ni implanted into InP, EPJ-APPL PH, 13(2), 2001, pp. 83-87
Status of ion microbeam facility at the Institute of Physics, Bhubaneswar,India
Authors: Rout, B Ghose, SK Mahapatra, DP Dev, BN Bakhru, H Haberl, AW
Citation: B. Rout et al., Status of ion microbeam facility at the Institute of Physics, Bhubaneswar,India, NUCL INST B, 181, 2001, pp. 110-115
Characterization of microstructures formed on MeV ion-irradiated silver films on Si(111) surfaces
Authors: Rout, B Kamila, J Ghose, SK Mahapatra, DP Dev, BN
Citation: B. Rout et al., Characterization of microstructures formed on MeV ion-irradiated silver films on Si(111) surfaces, NUCL INST B, 181, 2001, pp. 268-273
X-ray standing wave and reflectometric characterization of multilayer structures - art. no. 245409
Authors: Ghose, SK Dev, BN
Citation: Sk. Ghose et Bn. Dev, X-ray standing wave and reflectometric characterization of multilayer structures - art. no. 245409, PHYS REV B, 6324(24), 2001, pp. 5409
Development of an ion micro-beam facility at Institute of Physics, Bhubaneswar
Authors: Rout, B Ghose, SK Dey, S Mahapatra, DP Dev, BN Bakhru, H Haberl, AW
Citation: B. Rout et al., Development of an ion micro-beam facility at Institute of Physics, Bhubaneswar, I J PA PHYS, 39(1-2), 2001, pp. 62-64
Ion-irradiation-induced mixing, interface broadening and period dilation in Pt/C multilayers
Authors: Ghose, SK Goswami, DK Rout, B Dev, BN Kuri, G Materlik, G
Citation: Sk. Ghose et al., Ion-irradiation-induced mixing, interface broadening and period dilation in Pt/C multilayers, APPL PHYS L, 79(4), 2001, pp. 467-469
Response to "Comment on 'Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization' " [Appl. Phys. Lett. 78, 3550 (2001)]
Authors: Das, AK Kamila, J Dev, BN Sundaravel, B Kuri, G
Citation: Ak. Das et al., Response to "Comment on 'Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization' " [Appl. Phys. Lett. 78, 3550 (2001)], APPL PHYS L, 78(22), 2001, pp. 3552-3553
Resonance enhancement of x rays in layered materials: Application to surface enrichment in polymer blends
Authors: Dev, BN Das, AK Dev, S Schubert, DW Stamm, M Materlik, G
Citation: Bn. Dev et al., Resonance enhancement of x rays in layered materials: Application to surface enrichment in polymer blends, PHYS REV B, 61(12), 2000, pp. 8462-8468
Self-assembled gold silicide wires on bromine-passivated Si(110) surfaces
Authors: Rout, B Sundaravel, B Das, AK Ghose, SK Sekar, K Mahapatra, DP Dev, BN
Citation: B. Rout et al., Self-assembled gold silicide wires on bromine-passivated Si(110) surfaces, J VAC SCI B, 18(4), 2000, pp. 1847-1852
Spontaneous nanostructural island formation and layer-to-island mass transport in Ge layers on Si(111) surfaces
Authors: Das, AK Ghose, SK Dev, BN Kuri, G Yang, TR
Citation: Ak. Das et al., Spontaneous nanostructural island formation and layer-to-island mass transport in Ge layers on Si(111) surfaces, APPL SURF S, 165(4), 2000, pp. 260-270
Aspects of surface and interface characterizations by X-rays: The researchprogramme at IOP, Bhubaneswar
Authors: Dev, BN
Citation: Bn. Dev, Aspects of surface and interface characterizations by X-rays: The researchprogramme at IOP, Bhubaneswar, CURRENT SCI, 78(12), 2000, pp. 1511-1514
Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization
Authors: Das, AK Kamila, J Dev, BN Sundaravel, B Kuri, G
Citation: Ak. Das et al., Self-assembled Ge nanostructures on polymer-coated silicon: Growth and characterization, APPL PHYS L, 77(7), 2000, pp. 951-953
High energy high dose Si implantation into Ge and the effect of subsequentthermal annealing
Authors: Kuri, G Mahapatra, DP Dev, BN
Citation: G. Kuri et al., High energy high dose Si implantation into Ge and the effect of subsequentthermal annealing, RADIAT EFF, 147(3), 1999, pp. 133-149
Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum
Authors: Sundaravel, B Das, AK Ghose, SK Sekar, K Dev, BN
Citation: B. Sundaravel et al., Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum, APPL SURF S, 137(1-4), 1999, pp. 11-19
XPS and SIMS analysis of gold silicide grown on a bromine passivated Si(111) substrate
Authors: Sundaravel, B Sekar, K Kuri, G Satyam, PV Dev, BN Bera, S Narasimhan, SV Chakraborty, P Caccavale, F
Citation: B. Sundaravel et al., XPS and SIMS analysis of gold silicide grown on a bromine passivated Si(111) substrate, APPL SURF S, 137(1-4), 1999, pp. 103-112
Radiation damage and surface modification of GaAs(001) by MeV C+ and C-2(+) co-implantation with Ga2+
Authors: Ghose, SK Kuri, G Das, AK Rout, B Mahapatra, DP Dev, BN
Citation: Sk. Ghose et al., Radiation damage and surface modification of GaAs(001) by MeV C+ and C-2(+) co-implantation with Ga2+, NUCL INST B, 156(1-4), 1999, pp. 125-129
Improvement of Ag(111) epitaxy on Si(111) by MeV Si+ irradiation and ion microbeam analysis of thermally induced morphology
Authors: Sundaravel, B Das, AK Ghose, SK Rout, B Dev, BN
Citation: B. Sundaravel et al., Improvement of Ag(111) epitaxy on Si(111) by MeV Si+ irradiation and ion microbeam analysis of thermally induced morphology, NUCL INST B, 156(1-4), 1999, pp. 130-134
Materials modifications in heavy ion interactions with single crystals andtheir ion beam characterization
Authors: Dev, BN
Citation: Bn. Dev, Materials modifications in heavy ion interactions with single crystals andtheir ion beam characterization, NUCL INST B, 156(1-4), 1999, pp. 258-264
High-energy Ni implantation in InP
Authors: Chini, TK Bhattacharyya, SR Basu, D Rout, B Ghose, S Sundaravel, B Dev, BN Okuyama, F Kaneko, M
Citation: Tk. Chini et al., High-energy Ni implantation in InP, J MAT SCI L, 17(13), 1998, pp. 1117-1119
Risultati: 1-19 |