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Citation: G. Mannino et al., Effect of heating ramp rates on transient enhanced diffusion in ion-implanted silicon, APPL PHYS L, 78(7), 2001, pp. 889-891

Authors: Dirks, AG Webster, MN Turner, P Rich, P Butler, DC

Citation: Ag. Dirks et al., On the mechanism of aluminum via fill by reflow and forcefill as studied by transmission electron microscopy, J APPL PHYS, 85(1), 1999, pp. 571-577