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Results: 1-25 | 26-29 |
Results: 26-29/29
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
Authors: Hilburger, U Fix, W Mayer, R Geisselbrecht, W Malzer, S Velling, P Prost, W Tegude, FJ Dohler, GH
Citation: U. Hilburger et al., Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures, J CRYST GR, 202, 1999, pp. 574-577
Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes
Authors: Windisch, R Heremans, P Knobloch, A Kiesel, P Dohler, GH Dutta, B Borghs, G
Citation: R. Windisch et al., Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes, APPL PHYS L, 74(16), 1999, pp. 2256-2258
InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
Authors: Velling, P Fix, W Geisselbrecht, W Prost, W Dohler, GH Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth, J CRYST GR, 195(1-4), 1998, pp. 490-494
Hot electrons in n-i-p-i-based devices
Authors: Dohler, GH Heber, J Peter, M Eckl, S Malzer, S Forster, A Luth, H
Citation: Gh. Dohler et al., Hot electrons in n-i-p-i-based devices, S SEMI SCI, 5, 1998, pp. 479-504
Risultati: 1-25 | 26-29 |