Authors: Wagner, G Thomas, B Doerschel, J Dolle, J Irmscher, K

Citation: G. Wagner et al., Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers - Grown by hot-wall CVD, J ELEC MAT, 30(3), 2001, pp. 207-211

Authors: Rost, HJ Dolle, J Doerschel, J Siche, D Schulz, D Wollweber, J

Citation: Hj. Rost et al., Growth related distribution of secondary phase inclusions in 6H-SiC singlecrystals, J CRYST GR, 225(2-4), 2001, pp. 317-321

Authors: Rost, HJ Siche, D Dolle, J Eiserbeck, W Muller, T Schulz, D Wagner, G Wollweber, J

Citation: Hj. Rost et al., Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method, MAT SCI E B, 61-2, 1999, pp. 68-72

Authors: Schulz, D Wagner, G Doerschel, J Dolle, J Eiserbeck, W Muller, T Rost, HJ Siche, D Wollweber, J

Citation: D. Schulz et al., Influence of excess silicon on the surface morphology and defect structureduring the initial stages of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 86-88

Authors: Schulz, D Wagner, G Dolle, J Irmscher, K Muller, T Rost, HJ Siche, D Wollweber, J

Citation: D. Schulz et al., Impurity incorporation during sublimation growth of 6H bulk SiC, J CRYST GR, 199, 1999, pp. 1024-1027