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Results:
1-12
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Results: 12
Authors:
Arico, EM
Zinner, LB
Kanellakopulos, B
Dornberger, E
Rebizante, J
Apostolidis, C
Citation: Em. Arico et al., Structure and properties of hydrated La(III), Nd(III) and Er(III) methanesulfonates, J ALLOY COM, 323, 2001, pp. 39-44
Authors:
Evstratov, IY
Kalaev, VV
Nabokov, VN
Zhmakin, AI
Makarov, YN
Abramov, AG
Ivanov, NG
Rudinsky, EA
Smirnov, EM
Lowry, SA
Dornberger, E
Virbulis, J
Tomzig, E
Von Ammon, W
Citation: Iy. Evstratov et al., Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface, MICROEL ENG, 56(1-2), 2001, pp. 139-142
Authors:
Evstratov, IY
Kalaev, VV
Zhmakin, AI
Makarov, YN
Abramov, AG
Ivanov, NG
Smirnov, EM
Dornberger, E
Virbulis, J
Tomzig, E
von Ammon, W
Citation: Iy. Evstratov et al., Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals, J CRYST GR, 230(1-2), 2001, pp. 22-29
Authors:
Virbulis, J
Wetzel, T
Muiznieks, A
Hanna, B
Dornberger, E
Tomzig, E
Muhlbauer, A
von Ammon, W
Citation: J. Virbulis et al., Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields, J CRYST GR, 230(1-2), 2001, pp. 92-99
Authors:
Dornberger, E
von Ammon, W
Virbulis, J
Hanna, B
Sinno, T
Citation: E. Dornberger et al., Modeling of transient point defect dynamics in Czochralski silicon crystals, J CRYST GR, 230(1-2), 2001, pp. 291-299
Authors:
Dornberger, E
Virbulis, J
Hanna, B
Hoelzl, R
Daub, E
von Ammon, W
Citation: E. Dornberger et al., Silicon crystals for future requirements of 300 mm wafers, J CRYST GR, 229(1), 2001, pp. 11-16
Authors:
von Ammon, W
Holzl, R
Virbulis, J
Dornberger, E
Schmolke, R
Graf, D
Citation: W. Von Ammon et al., The impact of nitrogen on the defect aggregation in silicon, J CRYST GR, 226(1), 2001, pp. 19-30
Authors:
Sinno, T
Dornberger, E
von Ammon, W
Brown, RA
Dupret, F
Citation: T. Sinno et al., Defect engineering of Czochralski single-crystal silicon, MAT SCI E R, 28(5-6), 2000, pp. 149-198
Authors:
Tomzig, E
von Ammon, W
Dornberger, E
Lambert, U
Zulehner, W
Citation: E. Tomzig et al., Challenges for economical growth of high quality 300 mm CZ Si crystals, MICROEL ENG, 45(2-3), 1999, pp. 113-125
Authors:
von Ammon, W
Dornberger, E
Hansson, PO
Citation: W. Von Ammon et al., Bulk properties of very large diameter silicon single crystals, J CRYST GR, 199, 1999, pp. 390-398
Authors:
Muhe, A
Backofen, R
Fainberg, J
Muller, G
Dornberger, E
Tomzig, E
von Ammon, W
Citation: A. Muhe et al., Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation, J CRYST GR, 199, 1999, pp. 409-413
Authors:
Sinno, T
Susanto, H
Brown, RA
von Ammon, W
Dornberger, E
Citation: T. Sinno et al., Boron retarded self-interstitial diffusion in Czochralski growth of silicon crystals and its role in oxidation-induced stacking-fault ring dynamics, APPL PHYS L, 75(11), 1999, pp. 1544-1546
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