Authors: Dorozhkin, SI Timofeev, VB Hvam, J

Citation: Si. Dorozhkin et al., Persistent photoeffects in p-i-n GaAs/AlGaAs heterostructures with double quantum wells, SEMICONDUCT, 35(1), 2001, pp. 99-105

Authors: Dorozhkin, SI Smet, JH von Klitzing, K Umansky, V Haug, RJ Ploog, K

Citation: Si. Dorozhkin et al., Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system - art. no. 121301, PHYS REV B, 6312(12), 2001, pp. 1301

Authors: Dorozhkin, SI

Citation: Si. Dorozhkin, Comment on "Two-dimensional spin confinement in strained-layer quantum wells", PHYS REV B, 61(11), 2000, pp. 7803-7805

Authors: Dorozhkin, SI Dorokhova, MO

Citation: Si. Dorozhkin et Mo. Dorokhova, Incompressible electron phase in field-effect transistors, JETP LETTER, 71(10), 2000, pp. 417-421

Authors: Avrov, DD Bakin, AS Dorozhkin, SI Rastegaev, VP Tairov, YM

Citation: Dd. Avrov et al., The analysis of mass transfer in system beta-SiC-alpha-SiC under silicon carbide sublimation growth, J CRYST GR, 199, 1999, pp. 1011-1014

Authors: Bakin, AS Dorozhkin, SI Lebedev, AO Kirillov, BA Ivanov, AA Tairov, YM

Citation: As. Bakin et al., Stress and misoriented area formation under large silicon carbide boule growth, J CRYST GR, 199, 1999, pp. 1015-1018