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Results:
1-7
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Results: 7
Authors:
Banisaukas, H
Jones, KS
Talwar, S
Downey, DF
Falk, S
Citation: H. Banisaukas et al., Varying implant dose rate for defect reduction in laser thermal processing, MAT SC S PR, 4(4), 2001, pp. 339-343
Authors:
Ravindra, NM
Downey, DF
Marcus, SD
Sopori, BL
Citation: Nm. Ravindra et al., Special issue on manufacturing issues in rapid thermal processing - Foreword, J ELEC MAT, 28(12), 1999, pp. 1327-1327
Authors:
Downey, DF
Falk, SW
Bertuch, AF
Marcus, SD
Citation: Df. Downey et al., Effects of "fast" rapid thermal anneals on sub-keV boron and BF2 ion implants, J ELEC MAT, 28(12), 1999, pp. 1340-1344
Authors:
Lerch, W
Gluck, M
Stolwijk, NA
Walk, H
Schafer, M
Marcus, SD
Downey, DF
Chow, JW
Citation: W. Lerch et al., Boron ultrashallow junction formation in silicon by low-energy implantation and rapid thermal annealing in inert and oxidizing ambient, J ELCHEM SO, 146(7), 1999, pp. 2670-2678
Authors:
Marcus, S
Lerch, W
Downey, DF
Todorov, S
Chow, C
Citation: S. Marcus et al., RTP requirements to yield uniform and repeatable ultra-shallow junctions with low energy boron and BF2 ion implants, J ELEC MAT, 27(12), 1998, pp. 1291-1295
Authors:
Downey, DF
Marcus, SD
Chow, JW
Citation: Df. Downey et al., Optimization of RTA parameters to produce ultra-shallow, highly activated B+, BF2+, and As+ ion implanted junctions, J ELEC MAT, 27(12), 1998, pp. 1296-1314
Authors:
Downey, DF
Chow, JW
Ishida, E
Jones, KS
Citation: Df. Downey et al., Effect of fluorine on the diffusion of boron in ion implanted Si, APPL PHYS L, 73(9), 1998, pp. 1263-1265
Risultati:
1-7
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