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Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps
Authors: Zhao, FC Xia, GQ Du, LX Tan, HZ
Citation: Fc. Zhao et al., Improved analytical model for threshold behavior of sidegating effect in GaAs metal-semiconductor field-effect transistors induced by impact ionization of deep traps, J APPL PHYS, 85(1), 1999, pp. 604-607
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