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Results: 1-11 |
Results: 11
300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V
Authors: Dvorak, MW Bolognesi, CR Pitts, OJ Watkins, SP
Citation: Mw. Dvorak et al., 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V, IEEE ELEC D, 22(8), 2001, pp. 361-363
InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB
Authors: Bolognesi, CR Matine, N Dvorak, MW Yeo, P Xu, XG Watkins, SP
Citation: Cr. Bolognesi et al., InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHB, IEEE DEVICE, 48(11), 2001, pp. 2631-2639
Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb
Authors: Fink, V Chevalier, E Pitts, OJ Dvorak, MW Kavanagh, KL Bolognesi, CR Watkins, SP Hummel, S Moll, N
Citation: V. Fink et al., Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb, APPL PHYS L, 79(15), 2001, pp. 2384-2386
Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors
Authors: Dvorak, MW Matine, N Bolognesi, CR Xu, XG Watkins, SP
Citation: Mw. Dvorak et al., Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors, J VAC SCI A, 18(2), 2000, pp. 761-764
Heavily carbon-doped GaAsSb grown on InP for HBT applications
Authors: Watkins, SP Pitts, OJ Dale, C Xu, XG Dvorak, MW Matine, N Bolognesi, CR
Citation: Sp. Watkins et al., Heavily carbon-doped GaAsSb grown on InP for HBT applications, J CRYST GR, 221, 2000, pp. 59-65
High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation
Authors: Maher, H DiSanto, DW Dvorak, MW Soerensen, G Bolognesi, CR Bardwell, JA Tang, H Webb, JB
Citation: H. Maher et al., High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation, ELECTR LETT, 36(23), 2000, pp. 1969-1971
Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors: the role of channel quantization
Authors: Bolognesi, CR Dvorak, MW Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization effects on the microwave performance of InAs channel heterostructure field-effect transistors: the role of channel quantization, JPN J A P 1, 38(2B), 1999, pp. 1190-1194
Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations
Authors: Matine, N Dvorak, MW Pelouard, JL Pardo, F Bolognesi, CR
Citation: N. Matine et al., Fabrication and characterization of InP heterojunction bipolar transistorswith emitter edges parallel to [001] and [010] crystal orientations, JPN J A P 1, 38(2B), 1999, pp. 1200-1203
Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction
Authors: Bolognesi, CR Matine, N Dvorak, MW Xu, XG Hu, J Watkins, SP
Citation: Cr. Bolognesi et al., Non-blocking collector InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors with a staggered lineup base-collector junction, IEEE ELEC D, 20(4), 1999, pp. 155-157
Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's
Authors: Bolognesi, CR Dvorak, MW Chow, DH
Citation: Cr. Bolognesi et al., Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's, IEEE DEVICE, 46(5), 1999, pp. 826-832
Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
Authors: Xu, XG Hu, J Watkins, SP Matine, N Dvorak, MW Bolognesi, CR
Citation: Xg. Xu et al., Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors, APPL PHYS L, 74(7), 1999, pp. 976-978
Risultati: 1-11 |