Authors: Gu, SL Zhang, R Shi, Y Zheng, YD Zhang, L Dwikusuma, F Kuech, TF

Citation: Sl. Gu et al., The impact of initial growth and substrate nitridation on thick GaN growthon sapphire by hydride vapor phase epitaxy, J CRYST GR, 231(3), 2001, pp. 342-351