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Results:
1-7
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Results: 7
Authors:
SCHIMPE R
CREMER C
HOFFMANN L
ROMER D
SCHIER M
BAUMEISTER G
EBBINGHAUS G
KRISTEN G
MORVAN M
Citation: R. Schimpe et al., INP-BASED 2.5GBIT S OPTICALLY PREAMPLIFIED WDM RECEIVER/, Electronics Letters, 32(12), 1996, pp. 1141-1142
Authors:
ROMER D
LAUTERBACH C
HOFFMANN L
WALTER JW
HUBER H
EBBINGHAUS G
Citation: D. Romer et al., 700-MB S MONOLITHICALLY INTEGRATED 4-CHANNEL RECEIVER ARRAY OEIC USING ION-IMPLANTED INGAAS JFET TECHNOLOGY/, IEEE photonics technology letters, 7(5), 1995, pp. 543-545
Authors:
STRZODA R
EBBINGHAUS G
SCHERG T
EMEIS N
Citation: R. Strzoda et al., STUDIES ON THE BUTT-COUPLING OF INGAASP-WAVE-GUIDES REALIZED WITH SELECTIVE-AREA METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 154(1-2), 1995, pp. 27-33
Authors:
CREMER C
SCHIER M
BAUMEISTER G
EBBINGHAUS G
HUBER H
KUNKEL W
BAUER JG
KRISTEN G
RIEGER J
SCHIMPE R
STRZODA R
Citation: C. Cremer et al., WDM RECEIVER CHIP WITH HIGH RESPONSIVITY, Electronics Letters, 30(19), 1994, pp. 1625-1626
Authors:
BAUER JG
LAUTERBACH C
ROMER D
EMEIS N
HOFFMANN L
EBBINGHAUS G
Citation: Jg. Bauer et al., MONOLITHIC INTEGRATION OF A WAVE-GUIDE INGAAS INP PIN PHOTODIODE WITHA LOCALLY ION-IMPLANTED JFET FOR RECEIVER OEIC APPLICATIONS/, IEE proceedings. Part J, Optoelectronics, 140(1), 1993, pp. 66-70
Authors:
CREMER C
EMEIS N
SCHIER M
HEISE G
EBBINGHAUS G
Citation: C. Cremer et al., MONOLITHICALLY INTEGRATED DWDM RECEIVER, IEE proceedings. Part J, Optoelectronics, 140(1), 1993, pp. 71-74
Authors:
WALTER JW
LAUTERBACH C
ROMER D
MULLER J
EBBINGHAUS G
Citation: Jw. Walter et al., FULLY ION-IMPLANTED INP INGAAS HETEROJUNCTION FET FABRICATION IN A PHOTODIODE LAYER STRUCTURE FOR MONOLITHIC INTEGRATION/, Electronics Letters, 29(18), 1993, pp. 1599-1600
Risultati:
1-7
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