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Results:
1-11
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Results: 11
Authors:
UEDONO A
EBE H
TANAKA M
SUZUKI R
OHDAIRA T
TANIGAWA S
MIKADO T
YAMAMOTO K
MIYAMOTO Y
Citation: A. Uedono et al., DEFECTS IN ION-IMPLANTED HG0.78CD0.22TE PROBED BY MONOENERGETIC POSITRON BEAMS, JPN J A P 1, 37(7), 1998, pp. 3910-3914
Authors:
UEDONO A
EBE H
TANAKA M
TANIGAWA S
YAMAMOTO K
MIYAMOTO Y
Citation: A. Uedono et al., DEFECTS AND THEIR ANNEALING PROPERTIES IN B-IMPLANTED HG0.78CD0.22TE STUDIED BY POSITRON-ANNIHILATION(), JPN J A P 1, 37(3A), 1998, pp. 786-791
Authors:
TANAKA N
OZAKI K
NISHINO H
EBE H
MIYAMOTO Y
Citation: N. Tanaka et al., ELECTRICAL-PROPERTIES OF HGCDTE EPILAYERS DOPED WITH SILVER USING AN AGNO3 SOLUTION, Journal of electronic materials, 27(6), 1998, pp. 579-582
Authors:
EBE H
OKAMOTO T
YAMAMOTO K
MIYAMOTO Y
Citation: H. Ebe et al., NONUNIFORMITY OF HG DIFFUSION IN P-TYPE HGCDTE, Journal of crystal growth, 185, 1998, pp. 1223-1227
Authors:
UEDONO A
OZAKI K
EBE H
MORIYA T
TANIGAWA S
YAMAMOTO K
MIYAMOTO Y
Citation: A. Uedono et al., A STUDY OF NATIVE DEFECTS IN AG-DOPED HGCDTE BY POSITRON-ANNIHILATION, JPN J A P 1, 36(11), 1997, pp. 6661-6667
Authors:
EBE H
YAMAMOTO K
Citation: H. Ebe et K. Yamamoto, ELECTRICAL FLUCTUATIONS IN HGCDTE INTRODUCED DURING QUENCHING AFTER ANNEALING, Journal of crystal growth, 174(1-4), 1997, pp. 746-750
Authors:
EBE H
OKAMOTO T
NISHINO H
SAITO T
NISHIJIMA Y
UCHIKOSHI M
NAGASHIMA M
WADA H
Citation: H. Ebe et al., DIRECT GROWTH OF CDTE ON (100)SI, (211)SI, AND (111)SI BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 25(8), 1996, pp. 1358-1361
Authors:
MURAKAMI S
NISHINO H
EBE H
NISHIJIMA Y
Citation: S. Murakami et al., EFFECT OF DISLOCATIONS ON 1 F NOISE OF LONG-WAVELENGTH INFRARED PHOTODIODES FABRICATED WITH HGCDTE LAYERS GROWN ON GAAS BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 24(9), 1995, pp. 1143-1147
Authors:
NISHINO H
MURAKAMI S
EBE H
NISHIJIMA Y
Citation: H. Nishino et al., REDUCTION OF AUTODOPED GALLIUM CONCENTRATION IN HGCDTE LAYERS ON GAASGROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 619-623
Authors:
EBE H
NISHIJIMA Y
Citation: H. Ebe et Y. Nishijima, (111)A-CDTE ROTATION GROWTH ON (111)SI WITH LOW GROWTH-RATE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 67(21), 1995, pp. 3138-3140
Authors:
IYODA M
NAKAGAWA T
EBE H
ODA M
NAKAGAWA M
YAMAMOTO K
HIGUCHI H
OJIMA J
Citation: M. Iyoda et al., SYNTHESIS AND PROPERTIES OF A BISDEHYDRO[14]ANNULENO[C]FURAN AND AN ORTHO-ANNELATED TETRAKISDEHYDRO[14]ANNULENO[14]ANNULENE, Bulletin of the Chemical Society of Japan, 67(3), 1994, pp. 778-791
Risultati:
1-11
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