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Results: 1-16 |
Results: 16
MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, INGAN, AND GAN INGAN QUANTUM-WELL STRUCTURES/
Authors: JOHNSON MAL BROWN JD ELMASRY NA COOK JW SCHETZINA JF KONG HS EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, INGAN, AND GAN INGAN QUANTUM-WELL STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1282-1285
EFFECT OF DEEP LEVELS ON CURRENT EXCITATION IN 6H-SIC DIODES
Authors: KUZNETSOV NI EDMOND JA
Citation: Ni. Kuznetsov et Ja. Edmond, EFFECT OF DEEP LEVELS ON CURRENT EXCITATION IN 6H-SIC DIODES, Semiconductors, 31(10), 1997, pp. 1049-1052
MBE GROWTH AND PROPERTIES OF GAN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH BOWERS KA HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN ON GAN SIC SUBSTRATES/, Solid-state electronics, 41(2), 1997, pp. 213-218
GROWTH OF GAN, INGAN, AND ALGAN FILMS AND QUANTUM-WELL STRUCTURES BY MOLECULAR-BEAM EPITAXY
Authors: JOHNSON MAL HUGHES WC ROWLAND WH COOK JW SCHETZINA JF LEONARD M KONG HS EDMOND JA ZAVADA J
Citation: Mal. Johnson et al., GROWTH OF GAN, INGAN, AND ALGAN FILMS AND QUANTUM-WELL STRUCTURES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 72-78
PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/
Authors: BULMAN GE DOVERSPIKE K SHEPPARD ST WEEKS TW KONG HS DIERINGER HM EDMOND JA BROWN JD SWINDELL JT SCHETZINA JF
Citation: Ge. Bulman et al., PULSED OPERATION LASING IN A CLEAVED-FACET INGAN GAN MQW SCH LASER GROWN ON 6H-SIC/, Electronics Letters, 33(18), 1997, pp. 1556-1557
MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH BOWERS KA HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN, ALXGA1-XN, AND ALN ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2349-2353
MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/
Authors: JOHNSON MAL FUJITA S ROWLAND WH HUGHES WC HE YW ELMASRY NA COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Mal. Johnson et al., MBE GROWTH AND PROPERTIES OF GAN AND ALXGA1-XN ON GAN SIC SUBSTRATES/, Journal of electronic materials, 25(5), 1996, pp. 793-797
MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN SIC SUBSTRATES/
Authors: HUGHES WC ROWLAND WH JOHNSON MAL FUJITA S COOK JW SCHETZINA JF REN J EDMOND JA
Citation: Wc. Hughes et al., MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN SIC SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1571-1577
SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC
Authors: ZUBRILOV AS NIKOLAEV VI TSVETKOV DV DMITRIEV VA IRVINE KG EDMOND JA CARTER CH
Citation: As. Zubrilov et al., SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC, Applied physics letters, 67(4), 1995, pp. 533-535
PREEXPANSION GALEAL SCORING
Authors: EDMOND JA PADILLA JF
Citation: Ja. Edmond et Jf. Padilla, PREEXPANSION GALEAL SCORING, Plastic and reconstructive surgery, 93(5), 1994, pp. 1087-1089
BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC
Authors: EDMOND JA KONG HS CARTER CH
Citation: Ja. Edmond et al., BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC, Physica. B, Condensed matter, 185(1-4), 1993, pp. 453-460
6H-SILICON CARBIDE DEVICES AND APPLICATIONS
Authors: PALMOUR JW EDMOND JA KONG HS CARTER CH
Citation: Jw. Palmour et al., 6H-SILICON CARBIDE DEVICES AND APPLICATIONS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 461-465
OFF-THE-SHELF TECHNIQUES FOR CONTINUOUS TISSUE EXPANSION
Authors: EDMOND JA PADILLA JF
Citation: Ja. Edmond et Jf. Padilla, OFF-THE-SHELF TECHNIQUES FOR CONTINUOUS TISSUE EXPANSION, Annals of plastic surgery, 30(6), 1993, pp. 552-555
DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES
Authors: PALMOUR JW EDMOND JA CARTER CH
Citation: Jw. Palmour et al., DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2129-2130
OPTICAL REFLECTIVITY OF 3C AND 4H-SIC POLYTYPES - THEORY AND EXPERIMENT
Authors: LAMBRECHT WRL SEGALL B SUTTROP W YOGANATHAN M DEVATY RP CHOYKE WJ EDMOND JA POWELL JA ALOUANI M
Citation: Wrl. Lambrecht et al., OPTICAL REFLECTIVITY OF 3C AND 4H-SIC POLYTYPES - THEORY AND EXPERIMENT, Applied physics letters, 63(20), 1993, pp. 2747-2749
ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC
Authors: CLEMEN LL DEVATY RP MACMILLAN MF YOGANATHAN M CHOYKE WJ LARKIN DJ POWELL JA EDMOND JA KONG HS
Citation: Ll. Clemen et al., ALUMINUM ACCEPTOR 4 PARTICLE BOUND EXCITON COMPLEX IN 4H, 6H, AND 3C SIC, Applied physics letters, 62(23), 1993, pp. 2953-2955
Risultati: 1-16 |