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INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES/
Authors: VANES CM EIJKEMANS TJ WOLTER JH PEREIRA R VANHOVE M VANROSSUM M
Citation: Cm. Vanes et al., INFLUENCE OF CH4 H-2 REACTIVE ION ETCHING ON ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS/GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES/, Materials science and technology, 11(1), 1995, pp. 41-45
TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING/
Authors: VANES CM EIJKEMANS TJ WOLTER JH PEREIRA R VANHOVE M VANROSSUM M
Citation: Cm. Vanes et al., TRANSPORT AND OPTICAL-PROPERTIES OF ALGAAS GAAS AND PSEUDOMORPHIC ALGAAS/INGAAS/GAAS HETEROSTRUCTURES SUBJECTED TO CH4/H2 REACTIVE ION ETCHING/, Journal of applied physics, 74(10), 1993, pp. 6242-6246
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