Authors:
NI WX
EKBERG JO
JOELSSON KB
RADAMSON HH
HENRY A
SHEN GD
HANSSON GV
Citation: Wx. Ni et al., A SILICON MOLECULAR-BEAM EPITAXY SYSTEM DEDICATED TO DEVICE-ORIENTED MATERIAL RESEARCH, Journal of crystal growth, 157(1-4), 1995, pp. 285-294
Citation: Jo. Ekberg et J. Reader, SPECTRUM AND ENERGY-LEVELS OF 5-TIMES-IONIZED NIOBIUM (NB VI), Journal of the Optical Society of America. B, Optical physics, 11(3), 1994, pp. 415-427
Authors:
SARDELA MR
RADAMSON HH
EKBERG JO
SUNDGREN JE
HANSSON GV
Citation: Mr. Sardela et al., RELATION BETWEEN ELECTRICAL ACTIVATION AND THE B-INDUCED STRAIN IN SIDETERMINED BY RECIPROCAL LATTICE MAPPING, Semiconductor science and technology, 9(6), 1994, pp. 1272-1275
Authors:
SARDELA MR
RADAMSON HH
EKBERG JO
SUNDGREN JE
HANSSON GV
Citation: Mr. Sardela et al., GROWTH, ELECTRICAL-PROPERTIES AND RECIPROCAL LATTICE MAPPING CHARACTERIZATION OF HEAVILY B-DOPED, HIGHLY STRAINED SILICON-MOLECULAR BEAM EPITAXIAL STRUCTURES, Journal of crystal growth, 143(3-4), 1994, pp. 184-193
Citation: Jo. Ekberg, WAVELENGTHS AND TRANSITION-PROBABILITIES OF THE 3D(6)-3D(5)4P AND 3D(5)4S-3D(5)4P TRANSITION ARRAYS OF FE-III, Astronomy & Astrophysics. Supplement series, 101(1), 1993, pp. 1-36
Citation: Jo. Ekberg et U. Feldman, ATOMIC TRANSITION-PROBABILITIES OF FE-II LINES DETERMINED FROM SOLAR EMISSION-SPECTRA .1. THE 2000-2800-ANGSTROM WAVELENGTH RANGE, The Astrophysical journal. Supplement series, 86(2), 1993, pp. 611-628