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Citation: Bj. Yan et al., INFLUENCE OF LIGHT-INTENSITY ON HOLE TRANSPORT IN A-SI-H TRANSIENT PHOTOCURRENTS, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(3), 1996, pp. 543-554

Authors: ELIAT A YAN B ADRIAENSSENS GJ BEZEMER J

Citation: A. Eliat et al., TIME-OF-FLIGHT AND POST-TRANSIT SPECTROSCOPY OF A-SI1-XCX-H ALLOYS, Journal of non-crystalline solids, 200, 1996, pp. 592-595

Authors: YAN B ADRIAENSSENS GJ ELIAT A HAN D

Citation: B. Yan et al., FORWARD CURRENT TRANSIENTS IN AMORPHOUS-SILICON P-I-N STRUCTURES, Journal of non-crystalline solids, 190(1-2), 1995, pp. 85-94

Authors: YAN B ELIAT A ADRIAENSSENS GJ

Citation: B. Yan et al., EXPERIMENTAL-STUDY OF FORWARD CURRENT TRANSIENTS IN AMORPHOUS-SILICONP-I-N STRUCTURES, Applied physics letters, 65(18), 1994, pp. 2338-2340

Authors: SCHAUER F ELIAT A NESLADEK M ADRIAENSSENS GJ

Citation: F. Schauer et al., TRANSIENT SPACE-CHARGE-LIMITED CURRENTS - THE TIME-OF-FLIGHT AND POST-TRANSIT ANALYSIS IN HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 64(22), 1994, pp. 3009-3011

Authors: ELIAT A JANSEN J USALA S ADRIAENSSENS GJ

Citation: A. Eliat et al., TIME-OF-FLIGHT AND CONSTANT-PHOTOCURRENT MEASUREMENTS IN A-SI-S-H ALLOYS, Journal of non-crystalline solids, 166, 1993, pp. 1093-1096