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Results: 1-18 |
Results: 18
STUDY OF THIN-FILM DEPOSITION PROCESSES EMPLOYING VARIABLE KINETIC-ENERGY, HIGHLY COLLIMATED NEUTRAL MOLECULAR-BEAMS
Authors: ROADMAN SE MAITY N CARTER JN ENGSTROM JR
Citation: Se. Roadman et al., STUDY OF THIN-FILM DEPOSITION PROCESSES EMPLOYING VARIABLE KINETIC-ENERGY, HIGHLY COLLIMATED NEUTRAL MOLECULAR-BEAMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3423-3433
MONTE-CARLO ANALYSIS OF A HYPERTHERMAL SILICON DEPOSITION PROCESS
Authors: CHEN G BOYD ID ROADMAN SE ENGSTROM JR
Citation: G. Chen et al., MONTE-CARLO ANALYSIS OF A HYPERTHERMAL SILICON DEPOSITION PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 689-699
KINETICS AND DYNAMICS OF SI GSMBE STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY
Authors: ZHANG J LEES AK SCHELLINGER A ENGSTROM JR HSIEH ML ZETTLER JT TAYLOR AG JOYCE BA
Citation: J. Zhang et al., KINETICS AND DYNAMICS OF SI GSMBE STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY, Surface science, 404(1-3), 1998, pp. 480-486
A KINETIC MONTE-CARLO STUDY OF THE GROWTH OF SI ON SI(100) AT VARYINGANGLES OF INCIDENT DEPOSITION
Authors: LEVINE SW ENGSTROM JR CLANCY P
Citation: Sw. Levine et al., A KINETIC MONTE-CARLO STUDY OF THE GROWTH OF SI ON SI(100) AT VARYINGANGLES OF INCIDENT DEPOSITION, Surface science, 401(1), 1998, pp. 112-123
THE EFFECT OF STRAIN ON GAS-SURFACE REACTIVITY IN GROUP-IV HETEROEPITAXIAL SYSTEMS
Authors: LAM AM ZHENG YJ ENGSTROM JR
Citation: Am. Lam et al., THE EFFECT OF STRAIN ON GAS-SURFACE REACTIVITY IN GROUP-IV HETEROEPITAXIAL SYSTEMS, Chemical physics letters, 292(1-2), 1998, pp. 229-234
DIRECT IN-SITU CHARACTERIZATION OF GE SURFACE SEGREGATION IN STRAINEDSI1-XGEX EPITAXIAL THIN-FILMS
Authors: LAM AM ZHENG YJ ENGSTROM JR
Citation: Am. Lam et al., DIRECT IN-SITU CHARACTERIZATION OF GE SURFACE SEGREGATION IN STRAINEDSI1-XGEX EPITAXIAL THIN-FILMS, Applied physics letters, 73(14), 1998, pp. 2027-2029
GAS-SURFACE REACTIVITY IN MIXED-CRYSTAL SYSTEMS - THE REACTION OF GEH4 AND GE2H6 ON SI SURFACES
Authors: LAM AM ZHENG YJ ENGSTROM JR
Citation: Am. Lam et al., GAS-SURFACE REACTIVITY IN MIXED-CRYSTAL SYSTEMS - THE REACTION OF GEH4 AND GE2H6 ON SI SURFACES, Surface science, 393(1-3), 1997, pp. 205-221
SUPERSONIC MOLECULAR-BEAM STUDIES OF THE DISSOCIATIVE CHEMISORPTION OF GEH4 AND GE2H6 ON THE GE(100) AND GE(111) SURFACES
Authors: JONES ME ROADMAN SE LAM AM ERES G ENGSTROM JR
Citation: Me. Jones et al., SUPERSONIC MOLECULAR-BEAM STUDIES OF THE DISSOCIATIVE CHEMISORPTION OF GEH4 AND GE2H6 ON THE GE(100) AND GE(111) SURFACES, The Journal of chemical physics, 105(16), 1996, pp. 7140-7151
SUPERSONIC MOLECULAR-BEAM SCATTERING AS A PROBE OF THIN-FILM DEPOSITION PROCESSES
Authors: XIA LQ JONES ME MAITY N ENGSTROM JR
Citation: Lq. Xia et al., SUPERSONIC MOLECULAR-BEAM SCATTERING AS A PROBE OF THIN-FILM DEPOSITION PROCESSES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2651-2664
A SUPERSONIC MOLECULAR-BEAM STUDY OF THE CHEMISORPTION OF PH3 ON THE SI(100) SURFACE
Authors: MAITY N XIA LQ ROADMAN SE ENGSTROM JR
Citation: N. Maity et al., A SUPERSONIC MOLECULAR-BEAM STUDY OF THE CHEMISORPTION OF PH3 ON THE SI(100) SURFACE, Surface science, 344(3), 1995, pp. 203-220
THE ADSORPTION OF PH3 ON THE SI(111)-(7X7) SURFACE - AN EXAMPLE OF AUTOCATALYTIC DISSOCIATIVE CHEMISORPTION
Authors: MAITY N XIA LQ ROADMAN SE ENGSTROM JR
Citation: N. Maity et al., THE ADSORPTION OF PH3 ON THE SI(111)-(7X7) SURFACE - AN EXAMPLE OF AUTOCATALYTIC DISSOCIATIVE CHEMISORPTION, Surface science, 344(3), 1995, pp. 1201-1206
DISSOCIATION AND PYROLYSIS OF SI2H6 ON SI SURFACES - THE INFLUENCE OFSURFACE-STRUCTURE AND ADLAYER COMPOSITION
Authors: XIA LQ JONES ME MAITY N ENGSTROM JR
Citation: Lq. Xia et al., DISSOCIATION AND PYROLYSIS OF SI2H6 ON SI SURFACES - THE INFLUENCE OFSURFACE-STRUCTURE AND ADLAYER COMPOSITION, The Journal of chemical physics, 103(4), 1995, pp. 1691-1701
THERMAL AND PLASMA-ASSISTED NITRIDATION OF GAAS(100) USING NH3
Authors: JONES ME SHEALY JR ENGSTROM JR
Citation: Me. Jones et al., THERMAL AND PLASMA-ASSISTED NITRIDATION OF GAAS(100) USING NH3, Applied physics letters, 67(4), 1995, pp. 542-544
EFFECT OF PH3 ON THE DISSOCIATIVE CHEMISORPTION OF SIH4 AND SI2H6 ON SI(100) - IMPLICATIONS ON THE GROWTH OF IN-SITU DOPED SI THIN-FILMS
Authors: MAITY N XIA LQ ENGSTROM JR
Citation: N. Maity et al., EFFECT OF PH3 ON THE DISSOCIATIVE CHEMISORPTION OF SIH4 AND SI2H6 ON SI(100) - IMPLICATIONS ON THE GROWTH OF IN-SITU DOPED SI THIN-FILMS, Applied physics letters, 66(15), 1995, pp. 1909-1911
THE ROLE OF SURFACE CORRUGATION IN DIRECT TRANSLATIONALLY ACTIVATED DISSOCIATIVE ADSORPTION
Authors: XIA LQ ENGSTROM JR
Citation: Lq. Xia et Jr. Engstrom, THE ROLE OF SURFACE CORRUGATION IN DIRECT TRANSLATIONALLY ACTIVATED DISSOCIATIVE ADSORPTION, The Journal of chemical physics, 101(6), 1994, pp. 5329-5342
TRANSLATIONALLY ACTIVATED DISSOCIATIVE CHEMISORPTION OF SIH4 ON THE SI(100) AND SI(111) SURFACES
Authors: JONES ME XIA LQ MAITY N ENGSTROM JR
Citation: Me. Jones et al., TRANSLATIONALLY ACTIVATED DISSOCIATIVE CHEMISORPTION OF SIH4 ON THE SI(100) AND SI(111) SURFACES, Chemical physics letters, 229(4-5), 1994, pp. 401-407
DYNAMICS OF THE DISSOCIATIVE ADSORPTION OF DISILANE ON SI(100) - ENERGY SCALING AND THE EFFECT OF CORRUGATION
Authors: ENGSTROM JR HANSEN DA FURJANIC MJ XIA LQ
Citation: Jr. Engstrom et al., DYNAMICS OF THE DISSOCIATIVE ADSORPTION OF DISILANE ON SI(100) - ENERGY SCALING AND THE EFFECT OF CORRUGATION, The Journal of chemical physics, 99(5), 1993, pp. 4051-4054
DISSOCIATIVE ADSORPTION OF SI2H6 ON SILICON AT HYPERTHERMAL ENERGIES - THE INFLUENCE OF SURFACE-STRUCTURE
Authors: ENGSTROM JR XIA LQ FURJANIC MJ HANSEN DA
Citation: Jr. Engstrom et al., DISSOCIATIVE ADSORPTION OF SI2H6 ON SILICON AT HYPERTHERMAL ENERGIES - THE INFLUENCE OF SURFACE-STRUCTURE, Applied physics letters, 63(13), 1993, pp. 1821-1823
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