Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, ELECTRICAL CHARACTERIZATION OF THE BETA-FESI2 SI HETEROJUNCTION AFTERTHERMAL-OXIDATION/, Applied physics letters, 68(1), 1996, pp. 105-107

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, DEEP LEVELS IN SILICON AFTER IRON SILICIDE FORMATION, Semiconductor science and technology, 10(12), 1995, pp. 1645-1651

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, CARRIER TRANSPORT ACROSS THE BETA-FESI2 SI HETEROJUNCTION/, Solid-state electronics, 38(6), 1995, pp. 1143-1149

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, PROPERTIES OF IRON SILICIDE CONTACTS TO N-TYPE AND P-TYPE SILICON, Physica scripta. T, 54, 1994, pp. 300-304

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, DOPANT REDISTRIBUTION DURING THE FORMATION OF IRON SILICIDES, Applied surface science, 73, 1993, pp. 186-196