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Results: 1-25 | 26-29 |
Results: 26-29/29
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Authors: Ambacher, O Smart, J Shealy, JR Weimann, NG Chu, K Murphy, M Schaff, WJ Eastman, LF Dimitrov, R Wittmer, L Stutzmann, M Rieger, W Hilsenbeck, J
Citation: O. Ambacher et al., Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, J APPL PHYS, 85(6), 1999, pp. 3222-3233
Transient electron transport in wurtzite GaN, InN, and AlN
Authors: Foutz, BE O'Leary, SK Shur, MS Eastman, LF
Citation: Be. Foutz et al., Transient electron transport in wurtzite GaN, InN, and AlN, J APPL PHYS, 85(11), 1999, pp. 7727-7734
AlGaN GaN heterostructures on insulating AlGaN nucleation layers
Authors: Smart, JS Schremer, AT Weimann, NG Ambacher, O Eastman, LF Shealy, JR
Citation: Js. Smart et al., AlGaN GaN heterostructures on insulating AlGaN nucleation layers, APPL PHYS L, 75(3), 1999, pp. 388-390
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy
Authors: Murphy, MJ Chu, K Wu, H Yeo, W Schaff, WJ Ambacher, O Eastman, LF Eustis, TJ Silcox, J Dimitrov, R Stutzmann, M
Citation: Mj. Murphy et al., High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 75(23), 1999, pp. 3653-3655
Risultati: 1-25 | 26-29 |