Authors: Eccleston, W

Citation: W. Eccleston, Carrier generation and current flow at the interface between polysilicon and an SiO2 gate dielectric, MICROEL ENG, 59(1-4), 2001, pp. 295-300

Authors: Musa, I Baxendale, M Amaratunga, GAJ Eccleston, W

Citation: I. Musa et al., Properties of regioregular poly(3-octylthiophene)/multi-wall carbon nanotube composites, SYNTH METAL, 102(1-3), 1999, pp. 1250-1250

Authors: Musa, I Eccleston, W

Citation: I. Musa et W. Eccleston, Dielectric properties of regioregular poly(3-alkylthiophene) films, SYNTH METAL, 101(1-3), 1999, pp. 598-599

Authors: Eccleston, W

Citation: W. Eccleston, The effect of polysilicon grain boundaries on MOS based devices, MICROEL ENG, 48(1-4), 1999, pp. 105-108

Authors: Musa, I Eccleston, W

Citation: I. Musa et W. Eccleston, Electrical properties of polymer Si heterojunctions, THIN SOL FI, 344, 1999, pp. 469-475

Authors: Smith, JP Eccleston, W Brown, PD Humphreys, CJ

Citation: Jp. Smith et al., Electronic and structural properties of partially crystallized silicon produced by solid-phase crystallization of As-deposited amorphous silicon, J ELCHEM SO, 146(1), 1999, pp. 306-312