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Results:
1-19
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Results: 19
Authors:
Liu, LH
Liu, B
Shi, Y
Edgar, JH
Citation: Lh. Liu et al., Growth mode and defects in aluminum nitride sublimed on (0001) 6H-SiC substrates, MRS I J N S, 6(7), 2001, pp. 1-9
Authors:
Shi, Y
Liu, B
Liu, LH
Edgar, JH
Payzant, EA
Hayes, JM
Kuball, M
Citation: Y. Shi et al., New technique for sublimation growth of AlN single crystals, MRS I J N S, 6(5), 2001, pp. 1-10
Authors:
Shi, Y
Xie, ZY
Liu, LH
Liu, B
Edgar, JH
Kuball, M
Citation: Y. Shi et al., Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AIN grown by the sublimation sandwich technique, J CRYST GR, 233(1-2), 2001, pp. 177-186
Authors:
Kuball, M
Hayes, JM
Shi, Y
Edgar, JH
Prins, AD
van Uden, NWA
Dunstan, DJ
Citation: M. Kuball et al., Raman scattering studies on single-crystalline bulk AlN: temperature and pressure dependence of the AlN phonon modes, J CRYST GR, 231(3), 2001, pp. 391-396
Authors:
Xie, ZY
Edgar, JH
Burkland, BK
George, JT
Chaudhuri, J
Citation: Zy. Xie et al., DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0001), J CRYST GR, 224(3-4), 2001, pp. 235-243
Authors:
Kuball, M
Hayes, JM
Prins, AD
van Uden, NWA
Dunstan, DJ
Shi, Y
Edgar, JH
Citation: M. Kuball et al., Raman scattering studies on single-crystalline bulk AlN under high pressures, APPL PHYS L, 78(6), 2001, pp. 724-726
Authors:
Hayes, JM
Kuball, M
Shi, Y
Edgar, JH
Citation: Jm. Hayes et al., Temperature dependence of the phonons of bulk AlN, JPN J A P 2, 39(7B), 2000, pp. L710-L712
Authors:
Xie, ZY
Chen, SF
Edgar, JH
Barghout, K
Chaudhuri, J
Citation: Zy. Xie et al., Polytype controlled SiC epitaxy on on-axis 6H-SiC(0001) by adding HCl during growth, EL SOLID ST, 3(8), 2000, pp. 381-384
Authors:
Chaudhuri, J
Ignatiev, K
Edgar, JH
Xie, ZY
Gao, Y
Rek, Z
Citation: J. Chaudhuri et al., Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study, MAT SCI E B, 76(3), 2000, pp. 217-224
Authors:
Xie, ZY
Wei, CH
Chen, SF
Jiang, SY
Edgar, JH
Citation: Zy. Xie et al., Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD, J ELEC MAT, 29(4), 2000, pp. 411-417
Authors:
Wei, CH
Xie, ZY
Edgar, JH
Zeng, KC
Lin, JY
Jiang, HX
Chaudhuri, J
Ignatiev, C
Braski, DN
Citation: Ch. Wei et al., MOCVB growth of GaBN on 6H-SiC (0001) substrates, J ELEC MAT, 29(4), 2000, pp. 452-456
Authors:
Wei, CH
Xie, ZY
Li, LY
Yu, QM
Edgar, JH
Citation: Ch. Wei et al., MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates, J ELEC MAT, 29(3), 2000, pp. 317-321
Authors:
Wei, CH
Edgar, JH
Ignatiev, C
Chaudhuri, J
Citation: Ch. Wei et al., The role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films, THIN SOL FI, 360(1-2), 2000, pp. 34-38
Authors:
Liu, LH
Edgar, JH
Citation: Lh. Liu et Jh. Edgar, Transport effects in the sublimation growth of aluminum nitride, J CRYST GR, 220(3), 2000, pp. 243-253
Authors:
Wei, CH
Edgar, JH
Citation: Ch. Wei et Jh. Edgar, Thermodynamic analysis of GaxB1-xN grown by MOVPE, J CRYST GR, 217(1-2), 2000, pp. 109-114
Authors:
Xie, ZY
Wei, CH
Li, LY
Yu, QM
Edgar, JH
Citation: Zy. Xie et al., Gaseous etching of 6H-SiC at relatively low temperatures, J CRYST GR, 217(1-2), 2000, pp. 115-124
Authors:
Wei, CH
Edgar, JH
Citation: Ch. Wei et Jh. Edgar, Unstable composition region in the wurtzite B1-x-yGaxAlyN system, J CRYST GR, 208(1-4), 2000, pp. 179-182
Authors:
Saslaw, WC
Edgar, JH
Citation: Wc. Saslaw et Jh. Edgar, High-redshift galaxy clustering and Omega(0), ASTROPHYS J, 534(1), 2000, pp. 1-10
Authors:
Kuball, M
Hayes, JM
Shi, Y
Edgar, JH
Citation: M. Kuball et al., Phonon lifetimes in bulk AlN and their temperature dependence, APPL PHYS L, 77(13), 2000, pp. 1958-1960
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