Authors: Ledentsov, NN Litvinov, D Rosenauer, A Gerthsen, D Soshnikov, IP Shchukin, VA Ustinov, VM Egorov, AY Zukov, AE Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BP Bimberg, D Alferov, ZI

Citation: Nn. Ledentsov et al., Interface structure and growth mode of quantum wire and quantum dot GaAs-AlAs structures on corrugated (311)A surfaces, J ELEC MAT, 30(5), 2001, pp. 463-470

Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV Sachkov, VA

Citation: Va. Volodin et al., Transverse optical phonon splitting in GaAs/AlAs superlattices grown on the GaAs(311) surface studied by the method of Raman light scattering, SEMICONDUCT, 34(1), 2000, pp. 61-66

Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV Sachkov, VA Galaktionov, EA Kretinin, AV

Citation: Va. Volodin et al., Phonon-plasmon interaction in tunneling GaAs/AlAs superlattices, JETP LETTER, 71(11), 2000, pp. 477-480

Authors: Volodin, VA Efremov, MD Preobrazhenskii, VV Semyagin, BR Bolotov, VV

Citation: Va. Volodin et al., Raman study of confined TO phonons in GaAs/AlAs superlattices grown on GaAs (311)A and B surfaces, SUPERLATT M, 26(1), 1999, pp. 11-16

Authors: Efremov, MD Volodin, VA Preobrazhenskii, VV Semyagin, BR Sachkov, VA Bolotov, VV Galaktionov, EA Kretinin, AV

Citation: Md. Efremov et al., Lateral localization of optical phonons in GaAs quantum islands, JETP LETTER, 70(2), 1999, pp. 75-81

Authors: Volodin, VA Efremov, MD Gritsenko, VA Kochubei, SA

Citation: Va. Volodin et al., Raman study of silicon nanocrystals formed in SINx films by excimer laser or thermal annealing, APPL PHYS L, 73(9), 1998, pp. 1212-1214