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Results: 26-50/61
Authors:
Egawa, T
Ohtsubo, M
Nakagawa, H
Kuze, N
Fujiwara, H
Konaka, S
Citation: T. Egawa et al., Structural and conformational studies of N,N-dichloroethanamine and N,N-dichloro-2-propanamine by gas electron diffraction combined with ab initio calculations, J PHYS CH A, 104(6), 2000, pp. 1311-1318
Authors:
Kimata, M
Kubota, T
Otani, Y
Ohgami, M
Ishikawa, Y
Yokoyama, T
Issiki, S
Abe, S
Egawa, T
Tokuyama, J
Wada, N
Kumai, K
Kitajima, M
Mukai, M
Citation: M. Kimata et al., Gastrointestinal stromal tumors treated by laparoscopic surgery: Report ofthree cases, SURG TODAY, 30(2), 2000, pp. 177-180
Authors:
Ishikawa, H
Nakada, N
Nakaji, M
Zhao, GY
Egawa, T
Jimbo, T
Umeno, M
Citation: H. Ishikawa et al., Investigations on strained AlGaN/GaN/sapphire and GaInN multi-quantum-wellsurface LEDs using AlGaN/GaN Bragg reflectors, IEICE TR EL, E83C(4), 2000, pp. 591-597
Authors:
Kubota, F
Egawa, T
Saito, H
Uetsuki, S
Komine, T
Otsuki, H
Hasegawa, S
Citation: F. Kubota et al., QoS restoration that maintains minimum QoS requirements - A new approach for failure restoration, IEICE TR CO, E83B(12), 2000, pp. 2626-2634
Authors:
Hisano, T
Ohno, M
Egawa, T
Takano, T
Shimada, M
Citation: T. Hisano et al., Changes in diffusion-weighted MRI after status epilepticus, PED NEUROL, 22(4), 2000, pp. 327-329
Authors:
Wang, G
Ogawa, T
Soga, T
Egawa, T
Jimbo, T
Umeno, M
Citation: G. Wang et al., Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H-2 plasma, APPL SURF S, 159, 2000, pp. 191-196
Authors:
Kazi, ZI
Egawa, T
Jimbo, T
Umeno, M
Citation: Zi. Kazi et al., Self-formed In0.2Ga0.8As quantum dot-like laser grown by metal organic chemical vapor deposition on Si substrate, APPL SURF S, 159, 2000, pp. 540-543
Authors:
Okuyama, K
Noguchi, K
Kanenari, M
Egawa, T
Osawa, K
Ogawa, K
Citation: K. Okuyama et al., Structural diversity of chitosan and its complexes, CARBOHY POL, 41(3), 2000, pp. 237-247
Authors:
Tsuji, T
Takashima, H
Takeuchi, H
Egawa, T
Konaka, S
Citation: T. Tsuji et al., Molecular structure of trans-azoxybenzene determined by gas electron diffraction combined with ab initio calculations, J MOL STRUC, 554(2-3), 2000, pp. 203-210
Authors:
Abe, H
Kanemaru, M
Egawa, T
Nabetani, Y
Kato, T
Matsumoto, T
Citation: H. Abe et al., RHEED study of atomic steps on ZnSe surface growing on vicinal GaAs substrates, J CRYST GR, 214, 2000, pp. 595-601
Authors:
Egawa, T
Shimada, H
Ishimura, Y
Citation: T. Egawa et al., Formation of compound I in the reaction of native myoglobins with hydrogenperoxide, J BIOL CHEM, 275(45), 2000, pp. 34858-34866
Authors:
Hishiki, T
Shimada, H
Nagano, S
Egawa, T
Kanamori, Y
Makino, R
Park, SY
Adachi, S
Shiro, Y
Ishimura, Y
Citation: T. Hishiki et al., X-ray crystal structure and catalytic properties of Thr252Ile mutant of cytochrome P450cam: Roles of Thr252 and water in the active center, J BIOCHEM, 128(6), 2000, pp. 965-974
Authors:
Mishima, K
Iwasaki, K
Tsukikawa, H
Matsumoto, Y
Egashira, N
Abe, K
Egawa, T
Fujiwara, M
Citation: K. Mishima et al., The scopolamine-induced impairment of spatial cognition parallels the acetylcholine release in the ventral hippocampus in rats, JPN J PHARM, 84(2), 2000, pp. 163-173
Authors:
Egawa, T
Nakada, N
Ishikawa, H
Umeno, M
Citation: T. Egawa et al., GaN MESFETs on (111) Si substrate grown by MOCVD, ELECTR LETT, 36(21), 2000, pp. 1816-1818
Authors:
Wang, G
Soga, T
Egawa, T
Jimbo, T
Umeno, M
Citation: G. Wang et al., Enhanced spontaneous emission in hydrogen-plasma-passivated AlGaAs/GaAs vertical-cavity surface-emitting laser structures grown on Si substrate, ELECTR LETT, 36(17), 2000, pp. 1462-1464
Authors:
Egawa, T
Yamada, T
Konaka, S
Citation: T. Egawa et al., Torsional potential function of phenyl acetate in the S-1 state as studiedby fluorescence excitation spectroscopy in a supersonic free jet, CHEM P LETT, 324(4), 2000, pp. 260-264
Authors:
Zhao, GY
Adachi, M
Ishikawa, H
Egawa, T
Umeno, M
Jimbo, T
Citation: Gy. Zhao et al., Growth of Si delta-doped GaN by metalorganic chemical-vapor deposition, APPL PHYS L, 77(14), 2000, pp. 2195-2197
Authors:
Nakada, N
Nakaji, M
Ishikawa, H
Egawa, T
Umeno, M
Jimbo, T
Citation: N. Nakada et al., Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphire, APPL PHYS L, 76(14), 2000, pp. 1804-1806
Authors:
Egawa, T
Ishikawa, H
Umeno, M
Jimbo, T
Citation: T. Egawa et al., Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire, APPL PHYS L, 76(1), 2000, pp. 121-123
Authors:
Egawa, T
Nakamura, K
Ishikawa, H
Jimbo, T
Umeno, M
Citation: T. Egawa et al., Characteristics of a GaN metal semiconductor field-effect transistor grownon a sapphire substrate by metalorganic chemical vapor deposition, JPN J A P 1, 38(4B), 1999, pp. 2630-2633
Authors:
Kazi, ZI
Egawa, T
Jimbo, T
Umeno, M
Citation: Zi. Kazi et al., AlGaAs/GaAs laser diodes with GaAs islands active region on a Si substratewith higher characteristic temperature, JPN J A P 1, 38(1A), 1999, pp. 74-76
Authors:
Zhao, GY
Ishikawa, H
Jiang, H
Egawa, T
Jimbo, T
Umeno, M
Citation: Gy. Zhao et al., Optical absorption and photoluminescence studies of n-type GaN, JPN J A P 2, 38(9AB), 1999, pp. L993-L995
Authors:
Ishikawa, H
Zhao, GY
Nakada, N
Egawa, T
Jimbo, T
Umeno, M
Citation: H. Ishikawa et al., GaN on Si substrate with AlGaN/AlN intermediate layer, JPN J A P 2, 38(5A), 1999, pp. L492-L494
Authors:
Kimura, M
Nakamura, T
Iwamoto, A
Nishimura, Y
Egawa, T
Ito, A
Citation: M. Kimura et al., Cystic echinococcosis in a Jordanian patient: Albendazole in a short-term immigrant, J TRAVEL M, 6(4), 1999, pp. 249-253
Authors:
Kuze, N
Fujiwara, H
Takeuchi, H
Egawa, T
Konaka, S
Fogarasi, G
Citation: N. Kuze et al., Gas-phase molecular structure of MBBA (4-methoxybenzylidene-4 '-n-butylaniline), a mesogen, by electron diffraction combined with ab initio calculations, J PHYS CH A, 103(16), 1999, pp. 3054-3061