Authors:
Shibahara, K
Egusa, K
Kamesaki, K
Furumoto, H
Citation: K. Shibahara et al., Improvement in antimony-doped ultrashallow junction sheet resistance by dopant pileup reduction at the SiO2/Si interface, JPN J A P 1, 39(4B), 2000, pp. 2194-2197
Citation: K. Egusa et al., Stereoselective glycosylation and oligosaccharide synthesis on solid support using a 4-azido-3-chiorobenzyl group for temporary protection, SYNLETT, (1), 2000, pp. 27-32
Authors:
Koh, M
Egusa, K
Furumoto, H
Shirakata, T
Seo, E
Shibahara, K
Yokoyama, S
Hirose, M
Citation: M. Koh et al., Quantitative evaluation of dopant loss in 5-10 keV as ion implantation forlow-resistive, ultrashallow source/drain formation, JPN J A P 1, 38(4B), 1999, pp. 2324-2328
Authors:
Fukase, K
Nakai, Y
Egusa, K
Porco, JA
Kusumoto, S
Citation: K. Fukase et al., A novel oxidatively removable linker and its application to alpha-selective solid-phase oligosaccharide synthesis on a macroporous polystyrene support, SYNLETT, (7), 1999, pp. 1074-1078