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Results:
1-3
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Results: 3
MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m
Authors:
Wilk, A Fraisse, B Christol, P Boissier, G Grech, P El Gazouli, M Rouillard, Y Baranov, AN Joullie, A
Citation:
A. Wilk et al., MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m, J CRYST GR, 227, 2001, pp. 586-590
MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers
Authors:
Wilk, A Genty, F Fraisse, B Boissier, G Grech, P El Gazouli, M Christol, P Oswald, J Simecek, T Hulicius, E Joullie, A
Citation:
A. Wilk et al., MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers, J CRYST GR, 223(3), 2001, pp. 341-348
Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 mu m
Authors:
Wilk, A El Gazouli, M El Skouri, M Christol, P Grech, P Baranov, AN Joullie, A
Citation:
A. Wilk et al., Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 mu m, APPL PHYS L, 77(15), 2000, pp. 2298-2300
Risultati:
1-3
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