Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamrib, S Mitchel, WC

Citation: Cr. Elsass et al., Influence of growth temperature and thickness of AlGaN caps on electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 1, 40(11), 2001, pp. 6235-6238