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Results:
1-8
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Results: 8
Authors:
Zheng, YJ
Ma, PF
Engstrom, JR
Citation: Yj. Zheng et al., Etching by atomic hydrogen of Ge overlayers on Si(100), J APPL PHYS, 90(7), 2001, pp. 3614-3622
Authors:
Schroeder, TW
Ma, PF
Lam, AM
Zheng, YJ
Engstrom, JR
Citation: Tw. Schroeder et al., Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation, APPL PHYS L, 79(14), 2001, pp. 2181-2183
Authors:
Lee, D
Blakely, JM
Schroeder, TW
Engstrom, JR
Citation: D. Lee et al., A growth method for creating arrays of atomically flat mesas on silicon, APPL PHYS L, 78(10), 2001, pp. 1349-1351
Authors:
Zheng, YJ
Engstrom, JR
Zhang, J
Schellinger, A
Joyce, BA
Citation: Yj. Zheng et al., The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane, SURF SCI, 470(1-2), 2000, pp. 131-140
Authors:
Engstrom, JR
Weinberg, WH
Citation: Jr. Engstrom et Wh. Weinberg, Combinatorial materials science: Paradigm shift in materials discovery andoptimization, AICHE J, 46(1), 2000, pp. 2-5
Authors:
Chen, G
Boyd, ID
Engstrom, JR
Citation: G. Chen et al., Three dimensional modeling of silicon deposition process scale-up employing supersonic jets. II, J VAC SCI A, 17(3), 1999, pp. 978-985
Authors:
Zheng, YJ
Lam, AM
Engstrom, JR
Citation: Yj. Zheng et al., Modeling of Ge surface segregation in vapor-phase deposited Si1-xGex thin films, APPL PHYS L, 75(6), 1999, pp. 817-819
Authors:
Roadman, SE
Levine, SW
Zheng, YJ
Clancy, P
Engstrom, JR
Citation: Se. Roadman et al., Pattern formation and shadow instability in collimated energetic molecularbeam growth of silicon, APPL PHYS L, 74(1), 1999, pp. 25-27
Risultati:
1-8
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