Authors: Chang, KL Pickrell, GW Wohlert, DE Epple, JH Lin, HC Cheng, KY Hsieh, KC

Citation: Kl. Chang et al., Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As), J APPL PHYS, 89(1), 2001, pp. 747-752

Authors: Pickrell, GW Chang, KL Epple, JH Cheng, KY Hsieh, KC

Citation: Gw. Pickrell et al., Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy, J VAC SCI B, 18(6), 2000, pp. 2611-2614

Authors: Chang, KL Epple, JH Pickrell, GW Lin, HC Cheng, KY Hsieh, KC

Citation: Kl. Chang et al., Strain relaxation and defect reduction in InxGa1-xAs/GaAs by lateral oxidation of an underlying AlGaAs layer, J APPL PHYS, 88(11), 2000, pp. 6922-6924

Authors: Epple, JH Chang, KL Pickrell, GW Cheng, KY Hsieh, KC

Citation: Jh. Epple et al., Thermal wet oxidation of GaP and Al0.4Ga0.6P, APPL PHYS L, 77(8), 2000, pp. 1161-1163

Authors: Pickrell, GW Epple, JH Chang, KL Hsieh, KC Cheng, KY

Citation: Gw. Pickrell et al., Improvement of wet-oxidized AlxGa1-xAs (x similar to 1) through the use ofAlAs/GaAs digital alloys, APPL PHYS L, 76(18), 2000, pp. 2544-2546

Authors: Wohlert, DE Lin, HC Chang, KL Pickrell, GW Epple, JH Hsieh, KC Cheng, KY

Citation: De. Wohlert et al., Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector, APPL PHYS L, 75(10), 1999, pp. 1371-1373