Authors: Equer, B Cabarrocas, PRI

Citation: B. Equer et Pri. Cabarrocas, Proceedings of Symposium O on Thin Film Materials for Large Area Electronics of the E-MRS 2000 Spring Conference, Strasbourg, France, May 30-June 2, 2000 - Preface, THIN SOL FI, 383(1-2), 2001, pp. IX-IX

Authors: Hadjad, A Cabarrocas, PRI Equer, B

Citation: A. Hadjad et al., Mobility-edge shift during diborane doping in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbide, PHIL MAG B, 80(7), 2000, pp. 1317-1326

Authors: Niikura, C Guillet, J Brenot, R Equer, B Bouree, JE Voz, C Peiro, D Asensi, JM Bertomeu, J Andreu, J

Citation: C. Niikura et al., Comparative study of microcrystalline silicon films prepared in low or high pressure regime by hot-wire chemical vapor deposition, J NON-CRYST, 266, 2000, pp. 385-390

Authors: Chatterjee, P Vanderhaghen, R Equer, B

Citation: P. Chatterjee et al., The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures, J APPL PHYS, 87(4), 2000, pp. 1874-1881

Authors: Saha, SC Guillet, J Equer, B Bouree, JE

Citation: Sc. Saha et al., Device-quality polycrystalline silicon films deposited at low process temperatures by hot-wire chemical vapor deposition, THIN SOL FI, 337(1-2), 1999, pp. 248-252

Authors: Equer, B

Citation: B. Equer, Papers presented at the 1998 E-MRS Spring Conference, Symposium E: Thin Film Materials for Large Area Electronics Strasbourg, France, June 16-19, 1998 - Preface, THIN SOL FI, 337(1-2), 1999, pp. IX-IX