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Results:
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Results: 3
BaTbO3 as a new material for insulation and junction barriers in high-T-c devices
Authors:
Poppe, U Hojczyk, R Jia, CL Faley, MI Evers, W Bobba, F Urban, K Horstmann, C Dittmann, R Breuer, U Holzbrecher, H
Citation:
U. Poppe et al., BaTbO3 as a new material for insulation and junction barriers in high-T-c devices, IEEE APPL S, 9(2), 1999, pp. 3452-3455
Properties of Bi-2212/Bi-22Y2 step-stack Josephson junctions
Authors:
Lopera, N Baca, E Goomez, ME Prieto, P Poppe, U Evers, W
Citation:
N. Lopera et al., Properties of Bi-2212/Bi-22Y2 step-stack Josephson junctions, IEEE APPL S, 9(2), 1999, pp. 4288-4291
Growth and characterization of c-axis oriented YBa2Cu3O7-x/PrBa2Cu3O7-x bilayers
Authors:
Beneduce, C Bobba, F Boffa, M Cucolo, MC Cucolo, AM Evers, W
Citation:
C. Beneduce et al., Growth and characterization of c-axis oriented YBa2Cu3O7-x/PrBa2Cu3O7-x bilayers, INT J MOD B, 13(9-10), 1999, pp. 1005-1010
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