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Results:
1-7
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Results: 7
Authors:
DELCASTILLO E
FAN SK
SEMPLE J
Citation: E. Delcastillo et al., THE COMPUTATION OF GLOBAL-OPTIMA IN DUAL RESPONSE SYSTEMS, Journal of quality technology, 29(3), 1997, pp. 347-353
Authors:
CHANG XY
ZHU BQ
FAN SK
XIE GH
Citation: Xy. Chang et al., HIGH ABNORMAL EPSILON(ND)(T) VALUE AND ITS POSSIBLE EXPLANATION ON ARCHEAN MANTLE OF NORTHERN SHANXI PROVINCE, Chinese Science Bulletin, 39(16), 1994, pp. 1351-1355
Authors:
LIU W
BEAM E
HENDERSON T
FAN SK
Citation: W. Liu et al., EXTRINSIC BASE SURFACE PASSIVATION IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 14(6), 1993, pp. 301-303
Authors:
LIU W
FAN SK
KIM TS
BEAM EA
DAVITO DB
Citation: W. Liu et al., CURRENT TRANSPORT MECHANISM IN GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1378-1383
Authors:
LIU W
SEABAUGH AC
HENDERSON TS
YUKSEL A
BEAM EA
FAN SK
Citation: W. Liu et al., OBSERVATION OF RESONANT-TUNNELING AT ROOM-TEMPERATURE IN GAINP GAAS/GAINP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR/, I.E.E.E. transactions on electron devices, 40(8), 1993, pp. 1384-1389
Authors:
LIU W
FAN SK
HENDERSON T
DAVITO D
Citation: W. Liu et al., TEMPERATURE DEPENDENCES OF CURRENT GAINS IN GAINP GAAS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 40(7), 1993, pp. 1351-1353
Authors:
LIU W
HENDERSON T
FAN SK
Citation: W. Liu et al., ELECTRON SATURATION VELOCITY IN GA0.5INP0.5INP0.5P MEASURED IN A GALNP GAAS/GALNP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR/, Electronics Letters, 29(21), 1993, pp. 1885-1887
Risultati:
1-7
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