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Results:
1-7
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Results: 7
Authors:
AHOUJJA M
ELHAMRI S
NEWROCK RS
MAST DB
MITCHEL WC
LO I
FATHIMULLA A
Citation: M. Ahoujja et al., MULTIPLE SUBBAND POPULATION IN DELTA-DOPED ALASSB INGAAS HETEROSTRUCTURES/, Journal of applied physics, 81(3), 1997, pp. 1609-1611
Authors:
ROBLIN P
POTTER RC
FATHIMULLA A
Citation: P. Roblin et al., INTERFACE ROUGHNESS SCATTERING IN ALAS INGAAS RESONANT-TUNNELING DIODES WITH AN INAS SUBWELL/, Journal of applied physics, 79(5), 1996, pp. 2502-2508
Authors:
LO I
MITCHEL WC
YU PW
FATHIMULLA A
HIER H
Citation: I. Lo et al., EFFECT OF BARRIER MATERIAL ON THE 2-DIMENSIONAL ELECTRON-GAS IN DELTA-DOPED GAINAS-BASED QUANTUM-WELLS, Journal of applied physics, 79(12), 1996, pp. 9196-9199
Authors:
LO IK
WANG DP
HSIEH KY
WANG TF
MITCHEL WC
AHOUJJA M
CHENG JP
FATHIMULLA A
HIER H
Citation: Ik. Lo et al., PERSISTENT-PHOTOCONDUCTIVITY EFFECT IN DELTA-DOPED AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURES/, Physical review. B, Condensed matter, 52(20), 1995, pp. 14671-14676
Authors:
LO I
MITCHEL WC
AHOUJJA M
CHENG JP
FATHIMULLA A
MIER H
Citation: I. Lo et al., 2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS GA0.47IN0.53AS HETEROSTRUCTURES (VOL 66, PG 754, 1995)/, Applied physics letters, 67(3), 1995, pp. 444-444
Authors:
LO I
MITCHEL WC
AHOUJJA M
CHENG JP
FATHIMULLA A
MIER H
Citation: I. Lo et al., 2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS GA(0.47)IN(0.5)3AS HETEROSTRUCTURES/, Applied physics letters, 66(6), 1995, pp. 754-756
Authors:
RAO MV
DIETRICH HB
KLEIN PB
FATHIMULLA A
SIMONS DS
CHI PH
Citation: Mv. Rao et al., ION-IMPLANTATION INTO (X11)A-ORIENTED INP AND GAAS (X-LESS-THAN-OR-EQUAL-TO-4), Journal of applied physics, 75(12), 1994, pp. 7774-7778
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1-7
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