Authors: GREULICHWEBER S FEEGE F KALABUKHOVA KN LUKIN SN SPAETH JM ADRIAN FJ

Citation: S. Greulichweber et al., EPR AND ENDOR INVESTIGATIONS OF B-ACCEPTORS IN 3C-SILICON-CARBIDE, 4H-SILICON-CARBIDE AND 6H-SILICON-CARBIDE, Semiconductor science and technology, 13(1), 1998, pp. 59-70