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Citation: Pr. Wilshaw et Ts. Fell, ELECTRON-BEAM-INDUCED CURRENT INVESTIGATIONS OF TRANSITION-METAL IMPURITIES AT EXTENDED DEFECTS IN SILICON, Journal of the Electrochemical Society, 142(12), 1995, pp. 4298-4304

Authors: WILSHAW PR FELL TS AMAKU CA DECOTEAU MD

Citation: Pr. Wilshaw et al., ELECTRON-BEAM-INDUCED ACTIVITY OF DEFECTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 8-14

Authors: FELL TS WILSHAW PR DECOTEAU MD

Citation: Ts. Fell et al., EBIC INVESTIGATIONS OF DISLOCATIONS AND THEIR INTERACTIONS WITH IMPURITIES IN SILICON, Physica status solidi. a, Applied research, 138(2), 1993, pp. 695-704