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Results: 1-7 |
Results: 7
X-RAY PHOTOELECTRON-SPECTROSCOPY DAMAGE CHARACTERIZATION OF REACTIVELY ION ETCHED INP IN CH4-H-2 PLASMAS
Authors: FEURPRIER Y CARDINAUD C TURBAN G
Citation: Y. Feurprier et al., X-RAY PHOTOELECTRON-SPECTROSCOPY DAMAGE CHARACTERIZATION OF REACTIVELY ION ETCHED INP IN CH4-H-2 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1823-1832
RESIDENCE TIME EFFECTS ON SIO2 SI SELECTIVE ETCHING EMPLOYING HIGH-DENSITY FLUOROCARBON PLASMA/
Authors: CHINZEI Y ICHIKI T IKEGAMI N FEURPRIER Y SHINDO H HORIIKE Y
Citation: Y. Chinzei et al., RESIDENCE TIME EFFECTS ON SIO2 SI SELECTIVE ETCHING EMPLOYING HIGH-DENSITY FLUOROCARBON PLASMA/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1043-1050
PROPOSAL FOR AN ETCHING MECHANISM OF INP IN CH4-H-2 MIXTURES BASED ONPLASMA DIAGNOSTICS AND SURFACE-ANALYSIS
Authors: FEURPRIER Y CARDINAUD C GROLLEAU B TURBAN G
Citation: Y. Feurprier et al., PROPOSAL FOR AN ETCHING MECHANISM OF INP IN CH4-H-2 MIXTURES BASED ONPLASMA DIAGNOSTICS AND SURFACE-ANALYSIS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1552-1559
INFLUENCE OF THE GAS-MIXTURE ON THE REACTIVE ION ETCHING OF INP IN CH4-H-2 PLASMAS
Authors: FEURPRIER Y CARDINAUD C TURBAN G
Citation: Y. Feurprier et al., INFLUENCE OF THE GAS-MIXTURE ON THE REACTIVE ION ETCHING OF INP IN CH4-H-2 PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1733-1740
ETCH PRODUCT IDENTIFICATION DURING CH4-H-2 RIE OF INP USING MASS-SPECTROMETRY
Authors: FEURPRIER Y CARDINAUD C GROLLEAU B TURBAN G
Citation: Y. Feurprier et al., ETCH PRODUCT IDENTIFICATION DURING CH4-H-2 RIE OF INP USING MASS-SPECTROMETRY, Plasma sources science & technology, 6(4), 1997, pp. 561-568
SURFACE MODIFICATION AND ETCH PRODUCT DETECTION DURING REACTIVE ION ETCHING IN INP IN CH4-H-2 PLASMA
Authors: FEURPRIER Y CARDINAUD C TURBAN G
Citation: Y. Feurprier et al., SURFACE MODIFICATION AND ETCH PRODUCT DETECTION DURING REACTIVE ION ETCHING IN INP IN CH4-H-2 PLASMA, Plasma sources science & technology, 6(3), 1997, pp. 334-342
REDUCTION OF RECOMBINATION VELOCITY ON GAAS SURFACE BY GA-S AND AS-S BOND-RELATED SURFACE-STATES FROM (NH4)(2)S-X TREATMENT
Authors: SIK H FEURPRIER Y CARDINAUD C TURBAN G SCAVENNEC A
Citation: H. Sik et al., REDUCTION OF RECOMBINATION VELOCITY ON GAAS SURFACE BY GA-S AND AS-S BOND-RELATED SURFACE-STATES FROM (NH4)(2)S-X TREATMENT, Journal of the Electrochemical Society, 144(6), 1997, pp. 2106-2115
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