Authors: FOLKES PA SMITH D LUX RA ZHOU W THOMPSON R MOERKIRK R COOKE P BROWN K

Citation: Pa. Folkes et al., BACK-GATING EFFECT OF LOW-TEMPERATURE GAAS ON A PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR, Applied physics letters, 69(15), 1996, pp. 2234-2236

Authors: FOLKES PA DUTTA M RUDIN S SHEN H ZHOU W SMITH D TAYSINGLARA M NEWMAN P COLE M

Citation: Pa. Folkes et al., EXCITONIC RECOMBINATION OF DEGENERATE 2-DIMENSIONAL ELECTRONS WITH LOCALIZED PHOTOEXCITED HOLES IN A SINGLE-HETEROJUNCTION QUANTUM-WELL - REPLY, Physical review letters, 74(21), 1995, pp. 4356-4356

Authors: FOLKES PA DUTTA M RUDIN S SHEN H ZHOU W SMITH D TAYSINGLARA M NEWMAN P COLE M

Citation: Pa. Folkes et al., EXCITONIC RECOMBINATION OF DEGENERATE 2-DIMENSIONAL ELECTRONS WITH LOCALIZED PHOTOEXCITED HOLES IN A SINGLE-HETEROJUNCTION QUANTUM-WELL - REPLY, Physical review letters, 73(5), 1994, pp. 775-775

Authors: FOLKES PA

Citation: Pa. Folkes, FLUCTUATING DEEP-LEVEL TRAP OCCUPANCY MODEL FOR HOOGES 1 F NOISE PARAMETER FOR SEMICONDUCTOR RESISTORS/, Applied physics letters, 64(4), 1994, pp. 487-489

Authors: FOLKES PA DUTTA M RUDIN S SHEN H ZHOU W SMITH DD TAYSINGLARA M NEWMAN P COLE M

Citation: Pa. Folkes et al., EXCITONIC RECOMBINATION OF DEGENERATE 2-DIMENSIONAL ELECTRONS WITH LOCALIZED PHOTOEXCITED HOLES IN A SINGLE-HETEROJUNCTION QUANTUM-WELL, Physical review letters, 71(20), 1993, pp. 3379-3382