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Results: 1-10 |
Results: 10

Authors: COLOCCI M BOGANI F CARRARESI L MATTOLINI R BOSACCHI A FRANCHI S FRIGERI P TADDEI S ROSACLOT M
Citation: M. Colocci et al., SIZE QUANTIZATION PATTERNS IN SELF-ASSEMBLED INAS GAAS QUANTUM DOTS/, Superlattices and microstructures, 22(1), 1997, pp. 81-84

Authors: BOSACCHI A FRIGERI P FRANCHI S ALLEGRI P AVANZINI V
Citation: A. Bosacchi et al., INAS GAAS SELF-ASSEMBLED QUANTUM DOTS GROWN BY ALMBE AND MBE/, Journal of crystal growth, 175, 1997, pp. 771-776

Authors: BOSACCHI A DERICCARDIS AC FRIGERI P FRANCHI S FERRARI C GENNARI S LAZZARINI L NASI L SALVIATI G DRIGO AV ROMANATO F
Citation: A. Bosacchi et al., CONTINUOUSLY GRADED BUFFERS FOR INGAAS GAAS STRUCTURES GROWN ON GAAS/, Journal of crystal growth, 175, 1997, pp. 1009-1015

Authors: COLOCCI M BOGANI F CARRARESI L MATTOLINI R BOSACCHI A FRANCHI S FRIGERI P ROSACLOT M TADDEI S
Citation: M. Colocci et al., GROWTH-PATTERNS OF SELF-ASSEMBLED INAS QUANTUM DOTS NEAR 2-DIMENSIONAL TO 3-DIMENSIONAL TRANSITION, Applied physics letters, 70(23), 1997, pp. 3140-3142

Authors: BARALDI A FRIGERI P GHEZZI C PARISINI A BOSACCHI A FRANCHI S GOMBIA E MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER WITH NONMETASTABLE STATES OF THE DONOR IMPURITY IN SI-DOPED ALXGA1-XAS - EFFECTS ON THE LOW-TEMPERATURE ELECTRON-MOBILITY, Physical review. B, Condensed matter, 53(16), 1996, pp. 10715-10727

Authors: BRUSAFERRI L SANGUINETTI S GRILLI E GUZZI M BIGNAZZI A BOGANI F CARRARESI L COLOCCI M BOSACCHI A FRIGERI P FRANCHI S
Citation: L. Brusaferri et al., THERMALLY ACTIVATED CARRIER TRANSFER AND LUMINESCENCE LINE-SHAPE IN SELF-ORGANIZED INAS QUANTUM DOTS, Applied physics letters, 69(22), 1996, pp. 3354-3356

Authors: BARALDI A FRIGERI P CHEZZI C PARISINI A BOSACCHI A FRANCHI S GOMBIA E MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS (VOL 28, PG 412, 1994), Materials science & engineering. B, Solid-state materials for advanced technology, 34(2-3), 1995, pp. 236-236

Authors: BARALDI A FRIGERI P GHEZZI C PARISINI A BOSACCHI A FRANCHI S GOMBIA E MOSCA R
Citation: A. Baraldi et al., COEXISTENCE OF THE DX CENTER AND OTHER SI-RELATED ELECTRON BOUND-STATES IN ALXGA1-XAS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 412-415

Authors: MOSCA R GOMBIA E BOSACCHI A FRANCHI S GHEZZI C FRIGERI P
Citation: R. Mosca et al., HOLE INJECTION IN ALGAAS SCHOTTKY BARRIERS - INFLUENCE ON THE DX CENTER OCCUPATION, Journal of applied physics, 75(10), 1994, pp. 5072-5078

Authors: BARALDI A COLONNA E FRIGERI P GHEZZI C PARISINI A GOMBIA E MOSCA R
Citation: A. Baraldi et al., LOW-TEMPERATURE OCCUPATION OF A DONOR STATE RESONANT WITH THE CONDUCTION-BAND IN AL0.35GA0.65AS, Physical review. B, Condensed matter, 48(24), 1993, pp. 17835-17840
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