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Results:
1-8
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Results: 8
Authors:
THONISSEN M
BERGER MG
BILLAT S
ARENSFISCHER R
KRUGER M
LUTH H
THEISS W
HILLBRICH S
GROSSE P
LERONDEL G
FROTSCHER U
Citation: M. Thonissen et al., ANALYSIS OF THE DEPTH HOMOGENEITY OF P-PS BY REFLECTANCE MEASUREMENTS, Thin solid films, 297(1-2), 1997, pp. 92-96
Authors:
ROSSOW U
FROTSCHER U
PIETRYGA C
ASPNES DE
RICHTER W
Citation: U. Rossow et al., POROUS SILICON LAYERS AS A MODEL SYSTEM FOR NANOSTRUCTURES, Applied surface science, 104, 1996, pp. 552-556
Authors:
ROSSOW U
FROTSCHER U
PIETRYGA C
RICHTER W
ASPNES DE
Citation: U. Rossow et al., INTERPRETATION OF THE DIELECTRIC FUNCTION OF POROUS SILICON LAYERS, Applied surface science, 102, 1996, pp. 413-416
Authors:
FROTSCHER U
ROSSOW U
EBERT M
PIETRYGA C
RICHTER W
BERGER MG
ARENSFISCHER R
MUNDER H
Citation: U. Frotscher et al., INVESTIGATION OF DIFFERENT OXIDATION PROCESSES FOR POROUS SILICON STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 276(1-2), 1996, pp. 36-39
Authors:
THONISSEN M
BILLAT S
KRUGER M
LUTH H
BERGER MG
FROTSCHER U
ROSSOW U
Citation: M. Thonissen et al., DEPTH INHOMOGENEITY OF POROUS SILICON LAYERS, Journal of applied physics, 80(5), 1996, pp. 2990-2993
Authors:
ROSSOW U
FROTSCHER U
THONISSEN M
BERGER MG
FROHNHOFF S
MUNDER H
RICHTER W
Citation: U. Rossow et al., INFLUENCE OF THE FORMATION CONDITIONS ON THE MICROSTRUCTURE OF POROUSSILICON LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 255(1-2), 1995, pp. 5-8
Authors:
RESCHESSER U
FROTSCHER U
ESSER N
ROSSOW U
RICHTER W
Citation: U. Reschesser et al., GROWTH MODE AND INTERFACE FORMATION OF SB ON GAAS(100), Surface science, 309, 1994, pp. 597-602
Authors:
ROSSOW U
FROTSCHER U
RICHTER W
ZAHN DRT
Citation: U. Rossow et al., INSITU OPTICAL CHARACTERIZATION WITH MONOLAYER SENSITIVITY - THE AS-TERMINATED SI(111) SURFACE, Surface science, 287, 1993, pp. 718-721
Risultati:
1-8
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