Authors:
ZHANG K
WU DW
FU JM
MILLER DL
FUKUDA M
YUN YH
SCHAUER S
Citation: K. Zhang et al., LOW-TEMPERATURE MIGRATION-ENHANCED EPITAXY OF BASE MATERIAL FOR ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Applied physics letters, 63(6), 1993, pp. 809-811
