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Results: 1-15 |
Results: 15
HUMAN THERMOREGULATORY RESPONSES DURING PROLONGED WALKING IN WATER AT25, 30 AND 35-DEGREES-C
Authors: SHIMIZU T KOSAKA M FUJISHIMA K
Citation: T. Shimizu et al., HUMAN THERMOREGULATORY RESPONSES DURING PROLONGED WALKING IN WATER AT25, 30 AND 35-DEGREES-C, European journal of applied physiology and occupational physiology, 78(6), 1998, pp. 473-478
NONPEPTIDE ANGIOTENSIN-II RECEPTOR ANTAGONIST RECOGNIZES INTERSPECIESDIFFERENCES IN ANGIOTENSIN AT(1) RECEPTORS
Authors: KAWANO K FUJISHIMA K NAGURA J YASUDA S",SHINKI,"HACHISU M KONNO F
Citation: K. Kawano et al., NONPEPTIDE ANGIOTENSIN-II RECEPTOR ANTAGONIST RECOGNIZES INTERSPECIESDIFFERENCES IN ANGIOTENSIN AT(1) RECEPTORS, European journal of pharmacology, 357(1), 1998, pp. 33-39
FEATURES OF SOI DRAMS AND THEIR POTENTIAL FOR LOW-VOLTAGE AND OR GIGA-BIT SCALE DRAMS/
Authors: YAMAGUCHI Y OASHI T EIMORI T IWAMATSU T MIYAMOTO S SUMA K TSURUDA T MORISHITA F HIROSE M HIDAKA H ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T MIYOSHI H
Citation: Y. Yamaguchi et al., FEATURES OF SOI DRAMS AND THEIR POTENTIAL FOR LOW-VOLTAGE AND OR GIGA-BIT SCALE DRAMS/, IEICE transactions on electronics, E79C(6), 1996, pp. 772-780
EMERGING MEMORY SOLUTIONS FOR GRAPHICS APPLICATIONS
Authors: SUIZU K OGAWA T FUJISHIMA K
Citation: K. Suizu et al., EMERGING MEMORY SOLUTIONS FOR GRAPHICS APPLICATIONS, IEICE transactions on electronics, E78C(7), 1995, pp. 773-781
ANTIARRHYTHMIC EFFECT RELATED TO THE PLASMA-CONCENTRATION OF PENTISOMIDE IN-VIVO AND THE ANTIARRHYTHMIC-CONCENTRATION RELATIONSHIP IN-VITRO
Authors: HACHISU M CHEN H SONEDA T FUJISHIMA K ISHIZUKA T KONNO F
Citation: M. Hachisu et al., ANTIARRHYTHMIC EFFECT RELATED TO THE PLASMA-CONCENTRATION OF PENTISOMIDE IN-VIVO AND THE ANTIARRHYTHMIC-CONCENTRATION RELATIONSHIP IN-VITRO, Drugs under experimental and clinical research, 21(4), 1995, pp. 145-151
PHARMACOLOGICAL PROFILE OF ME3221, A NOVEL ANGIOTENSIN-II RECEPTOR ANTAGONIST
Authors: NAGURA J YASUDA S FUJISHIMA K YAMAMOTO M HUI C KAWANO KI KATANO K OGINO H HACHISU M KONNO F
Citation: J. Nagura et al., PHARMACOLOGICAL PROFILE OF ME3221, A NOVEL ANGIOTENSIN-II RECEPTOR ANTAGONIST, European journal of pharmacology, 274(1-3), 1995, pp. 201-211
A WELL-SYNCHRONIZED SENSING EQUALIZING METHOD FOR SUB-1.0-V OPERATINGADVANCED DRAMS
Authors: OOISHI T ASAKURA M TOMISHIMA S HIDAKA H ARIMOTO K FUJISHIMA K
Citation: T. Ooishi et al., A WELL-SYNCHRONIZED SENSING EQUALIZING METHOD FOR SUB-1.0-V OPERATINGADVANCED DRAMS, IEICE transactions on electronics, E77C(5), 1994, pp. 762-770
A WELL-SYNCHRONIZED SENSING EQUALIZING METHOD FOR SUB-1.0-V OPERATINGADVANCED DRAMS
Authors: OOISHI T ASAKURA M TOMISHIMA S HIDAKA H ARIMOTO K FUJISHIMA K
Citation: T. Ooishi et al., A WELL-SYNCHRONIZED SENSING EQUALIZING METHOD FOR SUB-1.0-V OPERATINGADVANCED DRAMS, IEEE journal of solid-state circuits, 29(4), 1994, pp. 432-440
AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME
Authors: ASAKURA M OOISHI T TSUKUDE M TOMISHIMA S EIMORI T HIDAKA H OHNO Y ARIMOTO K FUJISHIMA K NISHIMURA T YOSHIHARA T
Citation: M. Asakura et al., AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1303-1309
AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME
Authors: ASAKURA M OOISHI T TSUKUDE M TOMISHIMA S EIMORI T HIDAKA H OHNO Y ARIMOTO K FUJISHIMA K NISHIMURA T YOSHIHARA T
Citation: M. Asakura et al., AN EXPERIMENTAL 256-MB DRAM WITH BOOSTED SENSE-GROUND SCHEME, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1303-1309
AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/
Authors: SUMA K TSURUDA T HIDAKA H EIMORI T OASHI T YAMAGUCHI Y IWAMATSU T HIROSE M MORISHITA F ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T YOSHIHARA T
Citation: K. Suma et al., AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1323-1329
AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/
Authors: SUMA K TSURUDA T HIDAKA H EIMORI T OASHI T YAMAGUCHI Y IWAMATSU T HIROSE M MORISHITA F ARIMOTO K FUJISHIMA K INOUE Y NISHIMURA T YOSHIHARA T
Citation: K. Suma et al., AN SOI-DRAM WITH WIDE OPERATING VOLTAGE RANGE BY CMOS SIMOX TECHNOLOGY/, IEEE journal of solid-state circuits, 29(11), 1994, pp. 1323-1329
A SMART DESIGN METHODOLOGY WITH DISTRIBUTED EXTRA GATE-ARRAYS FOR ADVANCED ULSI MEMORIES
Authors: TSUKUDE M ARIMOTO K ASAKURA M HIDAKA H FUJISHIMA K
Citation: M. Tsukude et al., A SMART DESIGN METHODOLOGY WITH DISTRIBUTED EXTRA GATE-ARRAYS FOR ADVANCED ULSI MEMORIES, IEICE transactions on electronics, E76C(11), 1993, pp. 1589-1594
A LINE-MODE TEST WITH DATA REGISTER FOR ULSI MEMORY ARCHITECTURE
Authors: OOISHI T TSUKUDE M ARIMOTO K MATSUDA Y FUJISHIMA K
Citation: T. Ooishi et al., A LINE-MODE TEST WITH DATA REGISTER FOR ULSI MEMORY ARCHITECTURE, IEICE transactions on electronics, E76C(11), 1993, pp. 1595-1603
HIGHLY RELIABLE TESTING OF ULSI MEMORIES WITH ON-CHIP VOLTAGE-DOWN CONVERTERS
Authors: TSUKUDE M ARIMOTO K HIDAKA H KONISHI Y HAYASHIKOSHI M SUMA K FUJISHIMA K
Citation: M. Tsukude et al., HIGHLY RELIABLE TESTING OF ULSI MEMORIES WITH ON-CHIP VOLTAGE-DOWN CONVERTERS, IEEE design & test of computers, 10(2), 1993, pp. 6-12
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