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Results: 1-25 | 26-50 | 51-75 | 76-85 |
Results: 76-85/85
NUMERICAL MODELING OF TRANSIENT CHARACTERISTICS OF PHOTOVOLTAGE IN SCHOTTKY CONTACTS
Authors: CHEN TP HO SM FUNG S BELING CD
Citation: Tp. Chen et al., NUMERICAL MODELING OF TRANSIENT CHARACTERISTICS OF PHOTOVOLTAGE IN SCHOTTKY CONTACTS, Journal of applied physics, 76(11), 1994, pp. 7624-7626
DETERMINATION OF LEAKAGE RESISTANCE OF SCHOTTKY CONTACTS BY PHOTOVOLTAGE MEASUREMENTS
Authors: CHEN TP LEE TC FUNG S BELING CD
Citation: Tp. Chen et al., DETERMINATION OF LEAKAGE RESISTANCE OF SCHOTTKY CONTACTS BY PHOTOVOLTAGE MEASUREMENTS, Journal of applied physics, 75(11), 1994, pp. 7361-7364
THE EFFECT OF THE TEMPERATURE-DEPENDENCE OF THE IDEALITY FACTOR ON METAL-SEMICONDUCTOR SOLAR DEVICES
Authors: LEE TC CHEN TP AU HL FUNG S BELING CD
Citation: Tc. Lee et al., THE EFFECT OF THE TEMPERATURE-DEPENDENCE OF THE IDEALITY FACTOR ON METAL-SEMICONDUCTOR SOLAR DEVICES, Semiconductor science and technology, 8(7), 1993, pp. 1357-1360
REVERSE IV CHARACTERISTICS OF AU SEMI-INSULATING INP(100)/
Authors: LEE TC AU HL CHEN TP LING CC FUNG S BELING CD
Citation: Tc. Lee et al., REVERSE IV CHARACTERISTICS OF AU SEMI-INSULATING INP(100)/, Semiconductor science and technology, 8(5), 1993, pp. 709-711
A PHOTOVOLTAIC STUDY OF CURRENT TRANSPORT AND ITS INFLUENCE ON THE DETERMINATION OF THE SCHOTTKY-BARRIER HEIGHT IN SCHOTTKY DIODES
Authors: CHEN TP LEE TC FUNG S BELING CD
Citation: Tp. Chen et al., A PHOTOVOLTAIC STUDY OF CURRENT TRANSPORT AND ITS INFLUENCE ON THE DETERMINATION OF THE SCHOTTKY-BARRIER HEIGHT IN SCHOTTKY DIODES, Semiconductor science and technology, 8(12), 1993, pp. 2085-2091
A CALCULATION OF THE PHOTOVOLTAGE AT THE METAL-SEMICONDUCTOR INTERFACE
Authors: LING CC CHEN TP FUNG S
Citation: Cc. Ling et al., A CALCULATION OF THE PHOTOVOLTAGE AT THE METAL-SEMICONDUCTOR INTERFACE, Surface science, 294(3), 1993, pp. 367-372
CURRENT TRANSPORT AND ITS EFFECT ON THE DETERMINATION OF THE SCHOTTKY-BARRIER HEIGHT IN A TYPICAL SYSTEM - GOLD ON SILICON
Authors: CHEN TP LEE TC LING CC BELING CD FUNG S
Citation: Tp. Chen et al., CURRENT TRANSPORT AND ITS EFFECT ON THE DETERMINATION OF THE SCHOTTKY-BARRIER HEIGHT IN A TYPICAL SYSTEM - GOLD ON SILICON, Solid-state electronics, 36(7), 1993, pp. 949-954
NUMERICAL STUDY OF THE DECAY OF PHOTOVOLTAGE AT METAL-SEMICONDUCTOR INTERFACES
Authors: CHEN TP AU HL LEE TC LING CC BELING CD FUNG S
Citation: Tp. Chen et al., NUMERICAL STUDY OF THE DECAY OF PHOTOVOLTAGE AT METAL-SEMICONDUCTOR INTERFACES, Solid state communications, 87(12), 1993, pp. 1163-1167
DETERMINATION OF THE RECOMBINATION CURRENT IN SCHOTTKY DIODES FROM PHOTOVOLTAGE MEASUREMENTS
Authors: CHEN TP LEE TC FUNG S BELING CD
Citation: Tp. Chen et al., DETERMINATION OF THE RECOMBINATION CURRENT IN SCHOTTKY DIODES FROM PHOTOVOLTAGE MEASUREMENTS, Physica status solidi. a, Applied research, 138(1), 1993, pp. 55-58
HIGH-DENSITY MULTIPLEX MUTATION ANALYSIS USING THE OLIGONUCLEOTIDE LIGATION ASSAY (OLA) AND SEQUENCE-CODED SEPARATION
Authors: WINNDEEN E GROSSMAN P FUNG S WOO S CHANG C BRINSON E EGGERDING F
Citation: E. Winndeen et al., HIGH-DENSITY MULTIPLEX MUTATION ANALYSIS USING THE OLIGONUCLEOTIDE LIGATION ASSAY (OLA) AND SEQUENCE-CODED SEPARATION, American journal of human genetics, 53(3), 1993, pp. 1512-1512
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